BCP5516H6327XTSA1
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Infineon Technologies BCP5516H6327XTSA1

Manufacturer No:
BCP5516H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The BCP5516H6327XTSA1 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is part of the BCP54-56 series, known for its high performance in audio frequency applications. It is designed to offer high collector current, low collector-emitter saturation voltage, and low noise characteristics, making it suitable for various audio and driver stages.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO60V
Collector-base voltageVCBO60V
Emitter-base voltageVEBO5V
Collector currentIC1A
Peak collector current (tp ≤ 10 ms)ICM1.5A
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation (TS ≤ 120°C)Ptot2W
Junction temperatureTj150°C
Storage temperatureTstg-65 to 150°C
DC current gain (IC = 150 mA, VCE = 2 V)hFE100 to 250
Collector-emitter saturation voltage (IC = 150 mA, IB = 15 mA)VCE(sat)0.2 to 0.6V

Key Features

  • High collector current
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BCP51-BCP53 (PNP) for NPN types
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101

Applications

The BCP5516H6327XTSA1 is suitable for various applications, including:

  • AF driver and output stages
  • Audio frequency input stages and driver applications

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP5516H6327XTSA1? The collector-emitter voltage (VCEO) is 60 V.
  2. What is the maximum collector current (IC) for this transistor? The maximum collector current (IC) is 1 A.
  3. What is the peak collector current for a pulse duration of 10 ms or less? The peak collector current (ICM) is 1.5 A for tp ≤ 10 ms.
  4. What are the storage temperature limits for this transistor? The storage temperature limits are -65 to 150 °C.
  5. Is the BCP5516H6327XTSA1 RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  6. What are the complementary types for this transistor? The complementary types are BCP51-BCP53 (PNP) for NPN types.
  7. What is the total power dissipation at a junction temperature of 120°C or less? The total power dissipation (Ptot) is 2 W at TS ≤ 120°C.
  8. What is the junction temperature limit for this transistor? The junction temperature limit is 150 °C.
  9. What are the typical applications for the BCP5516H6327XTSA1? Typical applications include AF driver and output stages, and audio frequency input stages and driver applications.
  10. Is the BCP5516H6327XTSA1 qualified according to any automotive standards? Yes, it is qualified according to AEC Q101.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP5516H6327XTSA1 BCP5616H6327XTSA1 BCP5216H6327XTSA1 BCP5316H6327XTSA1 BCP5416H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-24 PG-SOT223-4-10

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