BCP 56-10 E6433
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Infineon Technologies BCP 56-10 E6433

Manufacturer No:
BCP 56-10 E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BCP 56-10 E6433 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for medium power applications and is packaged in a SOT-223 (SC-73) surface-mount device (SMD) plastic package. Although the specific part number BCP 56-10 E6433 is listed as obsolete, its specifications and features remain relevant for understanding similar components.

The transistor is characterized by its high collector-emitter voltage and current handling capabilities, making it suitable for a variety of electronic circuits. It is important to note that while this specific part is no longer in production, its datasheet and specifications can still be useful for engineers and designers.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector Current IC 1 A
Peak Collector Current ICM 1.5 A (tp ≤ 10 ms)
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation Ptot 2 W (TS ≤ 120°C)
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz
DC Current Gain (hFE) hFE 63 (min) @ 150mA, 2V
Vce Saturation (Max) Vce(sat) 500mV @ 50mA, 500mA

Key Features

  • NPN Transistor Type: The BCP 56-10 E6433 is an NPN bipolar junction transistor, suitable for applications requiring high current gain and medium power handling.
  • High Collector-Emitter Voltage: It can handle a maximum collector-emitter voltage of 80V, making it robust for various power applications.
  • High Current Handling: The transistor can handle a maximum collector current of 1A and a peak collector current of 1.5A for short durations.
  • High Transition Frequency: With a transition frequency of 100MHz, it is suitable for high-frequency applications.
  • Surface Mount Package: The SOT-223 package is convenient for surface mount technology, facilitating easy integration into modern electronic circuits.
  • High Junction Temperature: The transistor can operate up to a junction temperature of 150°C, ensuring reliability in demanding thermal environments.

Applications

  • Amplifier Circuits: The high current gain and transition frequency make it suitable for use in amplifier circuits, including audio amplifiers and microwave amplifiers.
  • Switching Applications: It can be used as a switch in various electronic circuits due to its high current handling and low saturation voltage.
  • Drive Circuits: The transistor can drive various load devices such as electric motors, displays, and other high-current loads.
  • Constant Current Sources: It can be used to construct constant current source circuits, which are essential in many DC power supply applications.

Q & A

  1. Q: What is the collector-emitter voltage rating of the BCP 56-10 E6433 transistor?
    A: The collector-emitter voltage rating is 80V.
  2. Q: What is the maximum collector current of the BCP 56-10 E6433 transistor?
    A: The maximum collector current is 1A.
  3. Q: What is the transition frequency of the BCP 56-10 E6433 transistor?
    A: The transition frequency is 100MHz.
  4. Q: What type of package does the BCP 56-10 E6433 transistor use?
    A: It uses the SOT-223 (SC-73) surface-mount package.
  5. Q: What is the maximum junction temperature of the BCP 56-10 E6433 transistor?
    A: The maximum junction temperature is 150°C.
  6. Q: Is the BCP 56-10 E6433 transistor still in production?
    A: No, the BCP 56-10 E6433 is listed as obsolete and is no longer manufactured.
  7. Q: What is the DC current gain (hFE) of the BCP 56-10 E6433 transistor?
    A: The minimum DC current gain (hFE) is 63 at 150mA and 2V.
  8. Q: What are some common applications of the BCP 56-10 E6433 transistor?
    A: It is commonly used in amplifier circuits, switching applications, drive circuits, and constant current sources.
  9. Q: What is the total power dissipation of the BCP 56-10 E6433 transistor?
    A: The total power dissipation is 2W at a temperature (TS) of 120°C or less.
  10. Q: Is the BCP 56-10 E6433 transistor RoHS compliant?
    A: Yes, the transistor is RoHS compliant, though specific compliance details should be verified from the manufacturer or datasheet.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Similar Products

Part Number BCP 56-10 E6433 BCP 56-10 H6433
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4

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