BCP 56-10 E6433
  • Share:

Infineon Technologies BCP 56-10 E6433

Manufacturer No:
BCP 56-10 E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 56-10 E6433 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for medium power applications and is packaged in a SOT-223 (SC-73) surface-mount device (SMD) plastic package. Although the specific part number BCP 56-10 E6433 is listed as obsolete, its specifications and features remain relevant for understanding similar components.

The transistor is characterized by its high collector-emitter voltage and current handling capabilities, making it suitable for a variety of electronic circuits. It is important to note that while this specific part is no longer in production, its datasheet and specifications can still be useful for engineers and designers.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector Current IC 1 A
Peak Collector Current ICM 1.5 A (tp ≤ 10 ms)
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation Ptot 2 W (TS ≤ 120°C)
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz
DC Current Gain (hFE) hFE 63 (min) @ 150mA, 2V
Vce Saturation (Max) Vce(sat) 500mV @ 50mA, 500mA

Key Features

  • NPN Transistor Type: The BCP 56-10 E6433 is an NPN bipolar junction transistor, suitable for applications requiring high current gain and medium power handling.
  • High Collector-Emitter Voltage: It can handle a maximum collector-emitter voltage of 80V, making it robust for various power applications.
  • High Current Handling: The transistor can handle a maximum collector current of 1A and a peak collector current of 1.5A for short durations.
  • High Transition Frequency: With a transition frequency of 100MHz, it is suitable for high-frequency applications.
  • Surface Mount Package: The SOT-223 package is convenient for surface mount technology, facilitating easy integration into modern electronic circuits.
  • High Junction Temperature: The transistor can operate up to a junction temperature of 150°C, ensuring reliability in demanding thermal environments.

Applications

  • Amplifier Circuits: The high current gain and transition frequency make it suitable for use in amplifier circuits, including audio amplifiers and microwave amplifiers.
  • Switching Applications: It can be used as a switch in various electronic circuits due to its high current handling and low saturation voltage.
  • Drive Circuits: The transistor can drive various load devices such as electric motors, displays, and other high-current loads.
  • Constant Current Sources: It can be used to construct constant current source circuits, which are essential in many DC power supply applications.

Q & A

  1. Q: What is the collector-emitter voltage rating of the BCP 56-10 E6433 transistor?
    A: The collector-emitter voltage rating is 80V.
  2. Q: What is the maximum collector current of the BCP 56-10 E6433 transistor?
    A: The maximum collector current is 1A.
  3. Q: What is the transition frequency of the BCP 56-10 E6433 transistor?
    A: The transition frequency is 100MHz.
  4. Q: What type of package does the BCP 56-10 E6433 transistor use?
    A: It uses the SOT-223 (SC-73) surface-mount package.
  5. Q: What is the maximum junction temperature of the BCP 56-10 E6433 transistor?
    A: The maximum junction temperature is 150°C.
  6. Q: Is the BCP 56-10 E6433 transistor still in production?
    A: No, the BCP 56-10 E6433 is listed as obsolete and is no longer manufactured.
  7. Q: What is the DC current gain (hFE) of the BCP 56-10 E6433 transistor?
    A: The minimum DC current gain (hFE) is 63 at 150mA and 2V.
  8. Q: What are some common applications of the BCP 56-10 E6433 transistor?
    A: It is commonly used in amplifier circuits, switching applications, drive circuits, and constant current sources.
  9. Q: What is the total power dissipation of the BCP 56-10 E6433 transistor?
    A: The total power dissipation is 2W at a temperature (TS) of 120°C or less.
  10. Q: Is the BCP 56-10 E6433 transistor RoHS compliant?
    A: Yes, the transistor is RoHS compliant, though specific compliance details should be verified from the manufacturer or datasheet.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
0 Remaining View Similar

In Stock

-
428

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6433XTMA1
BCP5416H6433XTMA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP5610H6327XTSA1
BCP5610H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP 56-10 E6433
BCP 56-10 E6433
TRANS NPN 80V 1A SOT223-4
BCP 54-16 H6778
BCP 54-16 H6778
TRANS NPN 45V 1A SOT223-4
BCP 54-16 H6779
BCP 54-16 H6779
TRANS NPN 45V 1A SOT223-4
BCP 56-10 H6433
BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4
BCP 55-16 E6327
BCP 55-16 E6327
TRANS NPN 60V 1A SOT223-4
BCP5616E6327HTSA1
BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4

Similar Products

Part Number BCP 56-10 E6433 BCP 56-10 H6433
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4

Related Product By Categories

BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV70SH6827XTSA1
BAV70SH6827XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 807-25 E6433
BC 807-25 E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR