BCP 54-16 E6327
  • Share:

Infineon Technologies BCP 54-16 E6327

Manufacturer No:
BCP 54-16 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 54-16 E6327 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for various high-demand application scenarios, particularly where high current handling and low saturation voltage are required. It is part of the BCP54 series, which includes complementary types such as the BCP51 and BCP53 (PNP) transistors. The BCP 54-16 E6327 is known for its robust performance, making it suitable for a wide range of electronic circuits and systems.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Maximum Collector Current (Ic)1 A
Maximum Collector-Emitter Breakdown Voltage (Vceo)80 V
DC Current Gain (hFE) @ Ic and Vce100 @ 150 mA, 2 V
Collector-Emitter Saturation Voltage (Vce(sat)) @ Ib, Ic500 mV @ 50 mA, 500 mA
Maximum Power Dissipation (Pd)2 W
Operating Junction Temperature (Tj)150°C
Package TypePG-SOT223-4 (Surface Mount)
RoHS StatusLead Free / RoHS Compliant

Key Features

  • High collector current of up to 1 A, suitable for large current loads.
  • Low collector-emitter saturation voltage (Vce(sat)) of 500 mV, reducing energy consumption and improving efficiency.
  • High DC current gain (hFE) of 100 @ 150 mA, 2 V, enhancing current amplification and circuit sensitivity.
  • High-frequency response with a transition frequency of up to 125 MHz, suitable for high-frequency applications.
  • Pb-free (RoHS compliant) and surface mount packaging (PG-SOT223-4) for easy integration and mass production.

Applications

  • Analog Switch: Control the on and off of analog signals, such as in audio circuits.
  • Drive Circuit: Drive various load devices like electric motors and displays.
  • Microwave Amplifier: Utilize its high-frequency response characteristics for microwave amplifier circuits.
  • Constant Current Source: Function as a constant current source in various DC power supply circuits.

Q & A

  1. What is the maximum collector current of the BCP 54-16 E6327 transistor?
    The maximum collector current is 1 A.
  2. What is the collector-emitter breakdown voltage of this transistor?
    The collector-emitter breakdown voltage is 80 V.
  3. What is the DC current gain (hFE) of the BCP 54-16 E6327?
    The DC current gain (hFE) is 100 @ 150 mA, 2 V.
  4. What is the maximum power dissipation of this transistor?
    The maximum power dissipation is 2 W.
  5. Is the BCP 54-16 E6327 RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What is the typical application of the BCP 54-16 E6327 in high-frequency circuits?
    It is commonly used in microwave amplifier circuits due to its high-frequency response.
  7. What is the operating junction temperature of the BCP 54-16 E6327?
    The operating junction temperature is up to 150°C.
  8. What type of packaging does the BCP 54-16 E6327 use?
    It uses PG-SOT223-4 surface mount packaging.
  9. Can the BCP 54-16 E6327 be used as an analog switch?
    Yes, it can be used to control the on and off of analog signals.
  10. Is the BCP 54-16 E6327 suitable for driving load devices?
    Yes, it is suitable for driving various load devices such as electric motors and displays.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
0 Remaining View Similar

In Stock

-
19

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP5610H6327XTSA1
BCP5610H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP5616H6327XTSA1
BCP5616H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP55E6327HTSA1
BCP55E6327HTSA1
TRANS NPN 60V 1A SOT223-4
BCP 56-10 E6433
BCP 56-10 E6433
TRANS NPN 80V 1A SOT223-4
BCP 54-16 E6327
BCP 54-16 E6327
TRANS NPN 45V 1A SOT223-4
BCP 54-16 H6779
BCP 54-16 H6779
TRANS NPN 45V 1A SOT223-4
BCP 56-10 H6433
BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4
BCP 55-16 E6327
BCP 55-16 E6327
TRANS NPN 60V 1A SOT223-4

Similar Products

Part Number BCP 54-16 E6327 BCP 55-16 E6327 BCP 53-16 E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA SOT-143R
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT-143R-3D

Related Product By Categories

MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS16UE6327HTSA1
BAS16UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS7004SE6327HTSA1
BAS7004SE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS 40 B5003
BAS 40 B5003
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
Infineon Technologies
TRANS PNP 60V 0.6A SOT23
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSS83PH6327XTSA1
BSS83PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
BSP742RINT
BSP742RINT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8