Overview
The BCP 56-10 H6433 is an NPN silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is designed for use in AF driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is part of the BCP54-BCP56 series, which also includes complementary PNP types (BCP51-BCP53). The device is packaged in a Pb-free (RoHS compliant) SOT223 package, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 80 | V |
| Collector-base voltage | VCBO | 100 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 1 | A |
| Peak collector current (tp ≤ 10 ms) | ICM | 1.5 | A |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation (TS ≤ 120°C) | Ptot | 2 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| Thermal Resistance (Junction - soldering point) | RthJS | ≤ 15 K/W | |
| DC current gain (hFE) at IC = 150 mA, VCE = 2 V | hFE | 100 to 250 | |
| Collector-emitter saturation voltage at IC = 500 mA, IB = 50 mA | VCEsat | ≤ 0.5 | V |
| Transition frequency at IC = 50 mA, VCE = 10 V | fT | 100 MHz |
Key Features
- High collector current up to 1 A and peak collector current up to 1.5 A for tp ≤ 10 ms.
- Low collector-emitter saturation voltage (VCEsat) of ≤ 0.5 V.
- High DC current gain (hFE) ranging from 100 to 250.
- Transition frequency of 100 MHz, suitable for high-frequency applications.
- Pb-free (RoHS compliant) SOT223 package.
- Qualified according to AEC Q101 standards.
Applications
The BCP 56-10 H6433 transistor is primarily used in audio frequency driver and output stages due to its high collector current and low collector-emitter saturation voltage. It is suitable for various audio and general-purpose amplification applications, including audio amplifiers, power amplifiers, and other electronic circuits requiring high current handling and low voltage drop.
Q & A
- What is the collector-emitter voltage rating of the BCP 56-10 H6433 transistor?
The collector-emitter voltage (VCEO) is rated at 80 V. - What is the maximum collector current of the BCP 56-10 H6433 transistor?
The maximum collector current (IC) is 1 A, with a peak collector current (ICM) of 1.5 A for tp ≤ 10 ms. - What is the thermal resistance of the BCP 56-10 H6433 transistor?
The thermal resistance (RthJS) from junction to soldering point is ≤ 15 K/W. - What is the DC current gain (hFE) of the BCP 56-10 H6433 transistor?
The DC current gain (hFE) ranges from 100 to 250 at IC = 150 mA and VCE = 2 V. - What is the collector-emitter saturation voltage of the BCP 56-10 H6433 transistor?
The collector-emitter saturation voltage (VCEsat) is ≤ 0.5 V at IC = 500 mA and IB = 50 mA. - What is the transition frequency of the BCP 56-10 H6433 transistor?
The transition frequency (fT) is 100 MHz at IC = 50 mA and VCE = 10 V. - Is the BCP 56-10 H6433 transistor RoHS compliant?
Yes, the BCP 56-10 H6433 transistor is packaged in a Pb-free (RoHS compliant) SOT223 package. - What are the typical applications of the BCP 56-10 H6433 transistor?
The transistor is typically used in audio frequency driver and output stages, including audio amplifiers and power amplifiers. - What is the storage temperature range for the BCP 56-10 H6433 transistor?
The storage temperature range is -65 to 150 °C. - Is the BCP 56-10 H6433 transistor qualified according to any specific standards?
Yes, it is qualified according to AEC Q101 standards.
