BCP54E6327HTSA1
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Infineon Technologies BCP54E6327HTSA1

Manufacturer No:
BCP54E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54E6327HTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. Although this component is currently obsolete and no longer manufactured, it was widely used in various electronic applications due to its robust specifications and features. This NPN transistor was known for its high continuous collector current and medium power handling capabilities, making it suitable for a range of applications.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Base Voltage (VCBO) 45 V
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Maximum DC Collector Current (IC) 1 A
Peak Pulse Current (ICM) 2 A
Power Dissipation 2 W
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V @ 0.5 A
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hfe) 25-40
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Package/Case SOT-223-4

Key Features

  • High continuous collector current of 1 A and peak pulse current of 2 A.
  • Medium power dissipation of 2 W.
  • Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V at 0.5 A.
  • Gain bandwidth product (fT) of 100 MHz.
  • DC current gain (hfe) ranging from 25 to 40.
  • Totally lead-free and fully RoHS compliant.
  • Halogen- and antimony-free, making it a 'green' device.
  • Suitable for medium power switching or amplification applications.

Applications

  • Medium power switching or amplification applications.
  • AF driver and output stages.
  • Automotive applications requiring specific change control and compliance with AEC-Q100/101/200 standards.

Q & A

  1. Q: What is the transistor type of the BCP54E6327HTSA1?

    A: The BCP54E6327HTSA1 is an NPN bipolar junction transistor (BJT).

  2. Q: What is the maximum collector-emitter voltage (VCEO) of the BCP54E6327HTSA1?

    A: The maximum collector-emitter voltage (VCEO) is 45 V.

  3. Q: What is the maximum DC collector current (IC) of the BCP54E6327HTSA1?

    A: The maximum DC collector current (IC) is 1 A.

  4. Q: What is the power dissipation of the BCP54E6327HTSA1?

    A: The power dissipation is 2 W.

  5. Q: Is the BCP54E6327HTSA1 RoHS compliant?

    A: Yes, the BCP54E6327HTSA1 is totally lead-free and fully RoHS compliant.

  6. Q: What is the gain bandwidth product (fT) of the BCP54E6327HTSA1?

    A: The gain bandwidth product (fT) is 100 MHz.

  7. Q: What are the typical applications of the BCP54E6327HTSA1?

    A: Typical applications include medium power switching or amplification, AF driver and output stages, and automotive applications.

  8. Q: What is the package type of the BCP54E6327HTSA1?

    A: The package type is SOT-223-4.

  9. Q: Is the BCP54E6327HTSA1 still in production?

    A: No, the BCP54E6327HTSA1 is obsolete and no longer manufactured.

  10. Q: What are the available substitutes for the BCP54E6327HTSA1?

    A: Available substitutes include the BCP54H6327XTSA1.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Similar Products

Part Number BCP54E6327HTSA1 BCP55E6327HTSA1 BCP51E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4-10 PG-SOT223-4-10

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