BCP5616H6327XTSA1
  • Share:

Infineon Technologies BCP5616H6327XTSA1

Manufacturer No:
BCP5616H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616H6327XTSA1 is a high-performance NPN bipolar transistor manufactured by Infineon Technologies. This transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is part of the BCP56 series, known for its high collector current and low collector-emitter saturation voltage. The transistor is packaged in a SOT223 case, making it suitable for surface-mount technology (SMD) applications. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)80V
Collector current (IC)1A
Peak collector current (ICM)1.5A (tp ≤ 10 ms)
Base current (IB)100mA
Peak base current (IBM)200mA
Total power dissipation (Ptot)2W (TS ≤ 120°C)
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Frequency100MHz
CaseSOT223
MountingSMD

Key Features

  • High collector current of up to 1 A and peak collector current of 1.5 A (tp ≤ 10 ms)
  • Low collector-emitter saturation voltage, ensuring efficient operation
  • Pb-free and RoHS compliant, making it environmentally friendly
  • SOT223 package suitable for SMD applications
  • High frequency capability with a transition frequency of 100 MHz
  • Complementary types available (BCP51...BCP53 for PNP transistors)

Applications

The BCP5616H6327XTSA1 transistor is primarily used in audio frequency driver and output stages. It is also suitable for various general-purpose applications, including:

  • Audio amplifiers
  • Switching circuits
  • Power management systems
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the collector-emitter voltage of the BCP5616H6327XTSA1 transistor? The collector-emitter voltage (VCEO) is 80 V.
  2. What is the maximum collector current of the BCP5616H6327XTSA1 transistor? The maximum collector current (IC) is 1 A.
  3. What is the package type of the BCP5616H6327XTSA1 transistor? The transistor is packaged in a SOT223 case.
  4. Is the BCP5616H6327XTSA1 transistor RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What is the transition frequency of the BCP5616H6327XTSA1 transistor? The transition frequency is 100 MHz.
  6. What are the typical applications of the BCP5616H6327XTSA1 transistor? It is used in audio frequency driver and output stages, as well as in various general-purpose applications.
  7. What is the maximum junction temperature of the BCP5616H6327XTSA1 transistor? The maximum junction temperature (Tj) is 150 °C.
  8. What is the storage temperature range for the BCP5616H6327XTSA1 transistor? The storage temperature range (Tstg) is -65 to 150 °C.
  9. What is the total power dissipation of the BCP5616H6327XTSA1 transistor? The total power dissipation (Ptot) is 2 W at TS ≤ 120 °C.
  10. Are there complementary PNP transistors available for the BCP5616H6327XTSA1? Yes, complementary PNP transistors are available in the BCP51...BCP53 series.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
0 Remaining View Similar

In Stock

$0.21
4,447

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6327XTSA1
BCP5416H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP55E6327HTSA1
BCP55E6327HTSA1
TRANS NPN 60V 1A SOT223-4
BCP5610E6327HTSA1
BCP5610E6327HTSA1
TRANS NPN 80V 1A SOT223-4
BCP 56-10 E6433
BCP 56-10 E6433
TRANS NPN 80V 1A SOT223-4
BCP 54-16 H6778
BCP 54-16 H6778
TRANS NPN 45V 1A SOT223-4
BCP 54-16 H6779
BCP 54-16 H6779
TRANS NPN 45V 1A SOT223-4
BCP 56-10 H6433
BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4
BCP5616E6327HTSA1
BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4

Similar Products

Part Number BCP5616H6327XTSA1 BCP5316H6327XTSA1 BCP5416H6327XTSA1 BCP5516H6327XTSA1 BCP5610H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-24 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10

Related Product By Categories

BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS723GWNT
BTS723GWNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I