BCP5616H6327XTSA1
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Infineon Technologies BCP5616H6327XTSA1

Manufacturer No:
BCP5616H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The BCP5616H6327XTSA1 is a high-performance NPN bipolar transistor manufactured by Infineon Technologies. This transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is part of the BCP56 series, known for its high collector current and low collector-emitter saturation voltage. The transistor is packaged in a SOT223 case, making it suitable for surface-mount technology (SMD) applications. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)80V
Collector current (IC)1A
Peak collector current (ICM)1.5A (tp ≤ 10 ms)
Base current (IB)100mA
Peak base current (IBM)200mA
Total power dissipation (Ptot)2W (TS ≤ 120°C)
Junction temperature (Tj)150°C
Storage temperature (Tstg)-65 to 150°C
Frequency100MHz
CaseSOT223
MountingSMD

Key Features

  • High collector current of up to 1 A and peak collector current of 1.5 A (tp ≤ 10 ms)
  • Low collector-emitter saturation voltage, ensuring efficient operation
  • Pb-free and RoHS compliant, making it environmentally friendly
  • SOT223 package suitable for SMD applications
  • High frequency capability with a transition frequency of 100 MHz
  • Complementary types available (BCP51...BCP53 for PNP transistors)

Applications

The BCP5616H6327XTSA1 transistor is primarily used in audio frequency driver and output stages. It is also suitable for various general-purpose applications, including:

  • Audio amplifiers
  • Switching circuits
  • Power management systems
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the collector-emitter voltage of the BCP5616H6327XTSA1 transistor? The collector-emitter voltage (VCEO) is 80 V.
  2. What is the maximum collector current of the BCP5616H6327XTSA1 transistor? The maximum collector current (IC) is 1 A.
  3. What is the package type of the BCP5616H6327XTSA1 transistor? The transistor is packaged in a SOT223 case.
  4. Is the BCP5616H6327XTSA1 transistor RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What is the transition frequency of the BCP5616H6327XTSA1 transistor? The transition frequency is 100 MHz.
  6. What are the typical applications of the BCP5616H6327XTSA1 transistor? It is used in audio frequency driver and output stages, as well as in various general-purpose applications.
  7. What is the maximum junction temperature of the BCP5616H6327XTSA1 transistor? The maximum junction temperature (Tj) is 150 °C.
  8. What is the storage temperature range for the BCP5616H6327XTSA1 transistor? The storage temperature range (Tstg) is -65 to 150 °C.
  9. What is the total power dissipation of the BCP5616H6327XTSA1 transistor? The total power dissipation (Ptot) is 2 W at TS ≤ 120 °C.
  10. Are there complementary PNP transistors available for the BCP5616H6327XTSA1? Yes, complementary PNP transistors are available in the BCP51...BCP53 series.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP5616H6327XTSA1 BCP5316H6327XTSA1 BCP5416H6327XTSA1 BCP5516H6327XTSA1 BCP5610H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-24 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10

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