IRFR120NTRPBF
  • Share:

Infineon Technologies IRFR120NTRPBF

Manufacturer No:
IRFR120NTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 9.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFR120NTRPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This device is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide range of devices for various applications. The IRFR120NTRPBF is packaged in a TO-252-3 (DPAK) surface mount package, making it suitable for a variety of electronic designs.

This MOSFET features a high Vds (Drain-Source Breakdown Voltage) of 100V and a continuous drain current (Id) of 9.4A, making it ideal for applications requiring high current-carrying capabilities. It operates in enhancement mode and has a low Rds On (Drain-Source Resistance) of 210mOhms, which ensures efficient power handling and minimal power loss.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Breakdown Voltage) 100 V
Id (Continuous Drain Current) 9.4 A
Rds On (Drain-Source Resistance) 210 mOhms
Vgs (Gate-Source Voltage Range) -20 to +20 V
Vgs th (Gate-Source Threshold Voltage) 1.8 V
Qg (Gate Charge) 25 nC
Tj (Operating Junction Temperature Range) -55 to +175 C
Pd (Power Dissipation) 48 W

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA) for robust performance.
  • Industry Standard Package: Available in TO-252-3 (DPAK) surface mount package for ease of design and integration.
  • High Performance in Low Frequency Applications: Optimized for applications switching below 100kHz.
  • Wide Availability: Broadly available from distribution partners, ensuring easy sourcing.
  • Standard Pinout: Allows for drop-in replacement, simplifying design and manufacturing processes.
  • Lead-Free Option: Available in lead-free packaging to meet environmental and regulatory requirements.

Applications

The IRFR120NTRPBF is versatile and can be used in a variety of applications, including:

  • DC Motors: Suitable for motor control and drive systems due to its high current-carrying capability.
  • Inverters and SMPS (Switch-Mode Power Supplies): Ideal for power conversion and switching applications.
  • Lighting Systems: Used in lighting control and power management.
  • Load Switches: Effective in load switching and power management circuits.
  • Battery-Powered Applications: Suitable for battery-powered devices requiring efficient power handling.

Q & A

  1. What is the maximum drain-source breakdown voltage (Vds) of the IRFR120NTRPBF?

    The maximum drain-source breakdown voltage (Vds) is 100V.

  2. What is the continuous drain current (Id) rating of the IRFR120NTRPBF?

    The continuous drain current (Id) rating is 9.4A.

  3. What is the typical Rds On (Drain-Source Resistance) of the IRFR120NTRPBF?

    The typical Rds On is 210mOhms.

  4. What is the gate-source threshold voltage (Vgs th) of the IRFR120NTRPBF?

    The gate-source threshold voltage (Vgs th) is 1.8V.

  5. What is the operating junction temperature range of the IRFR120NTRPBF?

    The operating junction temperature range is -55°C to +175°C.

  6. What is the power dissipation (Pd) of the IRFR120NTRPBF?

    The power dissipation (Pd) is 48W.

  7. In what package is the IRFR120NTRPBF available?

    The IRFR120NTRPBF is available in a TO-252-3 (DPAK) surface mount package.

  8. What are some common applications for the IRFR120NTRPBF?

    Common applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.

  9. Is the IRFR120NTRPBF available in lead-free packaging?

    Yes, the IRFR120NTRPBF is available in lead-free packaging.

  10. What is the gate charge (Qg) of the IRFR120NTRPBF?

    The gate charge (Qg) is 25nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.92
572

Please send RFQ , we will respond immediately.

Same Series
IRFR120NTRLPBF
IRFR120NTRLPBF
MOSFET N-CH 100V 9.4A DPAK
IRFU120NPBF
IRFU120NPBF
MOSFET N-CH 100V 9.4A IPAK
IRFR120NPBF
IRFR120NPBF
MOSFET N-CH 100V 9.4A DPAK
IRFR120NTRRPBF
IRFR120NTRRPBF
MOSFET N-CH 100V 9.4A DPAK
IRFR120NCPBF
IRFR120NCPBF
MOSFET N-CH 100V 9.4A DPAK
IRFR120NCTRLPBF
IRFR120NCTRLPBF
MOSFET N-CH 100V 9.4A DPAK

Similar Products

Part Number IRFR120NTRPBF IRFR120ZTRPBF IRFR120TRPBF IRFR120NTRRPBF IRFR1205TRPBF IRFR120NTRLPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 55 V 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc) 8.7A (Tc) 7.7A (Tc) 9.4A (Tc) 44A (Tc) 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 5.6A, 10V 190mOhm @ 5.2A, 10V 270mOhm @ 4.6A, 10V 210mOhm @ 5.6A, 10V 27mOhm @ 26A, 10V 210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 10 nC @ 10 V 16 nC @ 10 V 25 nC @ 10 V 65 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 310 pF @ 25 V 360 pF @ 25 V 330 pF @ 25 V 1300 pF @ 25 V 330 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 48W (Tc) 35W (Tc) 2.5W (Ta), 42W (Tc) 48W (Tc) 107W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak D-Pak D-Pak PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23-3
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
BSC016N06NSSCATMA1
BSC016N06NSSCATMA1
Infineon Technologies
TRENCH 40<-<100V PG-WSON-8
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
BSP762TXUMA1
BSP762TXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
BTS6163DAUMA1
BTS6163DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC