IRFP260NPBF
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Infineon Technologies IRFP260NPBF

Manufacturer No:
IRFP260NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 50A TO247AC
Delivery:
Payment:
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Product Introduction

Overview

The IRFP260NPBF is a 200V single N-channel power MOSFET produced by Infineon Technologies. It is part of the HEXFET family, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This device is housed in a TO-247-3 package, a standard through-hole power package, making it suitable for a wide range of applications. The IRFP260NPBF is known for its high current rating, increased ruggedness, and compliance with industry standard qualification levels such as JEDEC standards.

Key Specifications

ParameterValue
Voltage Rating (Vds)200V
Current Rating (Id)50A
On-Resistance (Rds(on))40mΩ @ 10V, 28A
Package TypeTO-247-3
Power Dissipation (Pd)300W
Threshold Voltage (Vth)4V @ 250μA

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard through-hole power package
  • High current carrying capability
  • Increased ruggedness
  • Standard pinout allows for drop-in replacement

Applications

The IRFP260NPBF is versatile and can be used in various applications, including:

  • DC motors
  • Inverters
  • Switch Mode Power Supplies (SMPS)
  • Lighting systems
  • Load switches
  • Battery-powered applications

Q & A

  1. What is the voltage rating of the IRFP260NPBF?
    The voltage rating of the IRFP260NPBF is 200V.
  2. What is the current rating of the IRFP260NPBF?
    The current rating of the IRFP260NPBF is 50A.
  3. What is the on-resistance of the IRFP260NPBF?
    The on-resistance of the IRFP260NPBF is 40mΩ @ 10V, 28A.
  4. In what package is the IRFP260NPBF available?
    The IRFP260NPBF is available in a TO-247-3 package.
  5. What is the power dissipation of the IRFP260NPBF?
    The power dissipation of the IRFP260NPBF is 300W.
  6. What is the threshold voltage of the IRFP260NPBF?
    The threshold voltage of the IRFP260NPBF is 4V @ 250μA.
  7. Is the IRFP260NPBF compliant with industry standards?
    Yes, the IRFP260NPBF is compliant with JEDEC standards.
  8. What types of applications is the IRFP260NPBF suitable for?
    The IRFP260NPBF is suitable for applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
  9. What are the key features of the IRFP260NPBF?
    The key features include planar cell structure, high current carrying capability, increased ruggedness, and standard pinout for drop-in replacement.
  10. Where can I purchase the IRFP260NPBF?
    The IRFP260NPBF can be purchased from various distributors such as Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:234 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4057 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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In Stock

$4.34
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Similar Products

Part Number IRFP260NPBF IRFP260PBF IRFP264NPBF IRFP460NPBF IRFP250NPBF IRFP260MPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 250 V 500 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 46A (Tc) 44A (Tc) 20A (Tc) 30A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 28A, 10V 55mOhm @ 28A, 10V 60mOhm @ 25A, 10V 240mOhm @ 12A, 10V 75mOhm @ 18A, 10V 40mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V 230 nC @ 10 V 210 nC @ 10 V 124 nC @ 10 V 123 nC @ 10 V 234 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4057 pF @ 25 V 5200 pF @ 25 V 3860 pF @ 25 V 3540 pF @ 25 V 2159 pF @ 25 V 4057 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 300W (Tc) 280W (Tc) 380W (Tc) 280W (Tc) 214W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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