IRLML6302TRPBF
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Infineon Technologies IRLML6302TRPBF

Manufacturer No:
IRLML6302TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 780MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML6302TRPBF is a P-Channel MOSFET produced by Infineon Technologies. Although this product is currently discontinued, it was designed for various low-power applications requiring high efficiency and reliability. The MOSFET is packaged in a SOT-23 form factor, making it suitable for space-constrained designs. It features a low on-resistance and is RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 20 V
ID (Continuous Drain Current) 780 mA
PD (Power Dissipation) 540 mW
RDS(on) (On-Resistance) 0.6 Ω @ VGS = 4.5 V, ID = 0.61 A
VGS(th) (Threshold Voltage) 1.5 V @ ID = 250 μA
Package SOT-23
RoHS Compliance Yes

Key Features

  • Low On-Resistance: The IRLML6302TRPBF features a low RDS(on) of 0.6 Ω, which minimizes power losses and enhances efficiency in low-power applications.
  • Compact Packaging: The SOT-23 package makes it ideal for designs where space is limited.
  • RoHS Compliance: Ensures the component meets environmental standards, making it suitable for a wide range of applications.
  • High Reliability: Designed to provide reliable performance in various low-power switching and linear applications.

Applications

  • Low-Power Switching: Suitable for applications requiring low-power switching, such as in consumer electronics and industrial control systems.
  • Linear Applications: Can be used in linear amplifier circuits and other applications where low power dissipation is critical.
  • Portable Devices: Ideal for use in portable devices due to its compact size and low power consumption.

Q & A

  1. What is the drain-source voltage rating of the IRLML6302TRPBF?

    The drain-source voltage (VDS) rating is 20 V.

  2. What is the continuous drain current (ID) of the IRLML6302TRPBF?

    The continuous drain current (ID) is 780 mA.

  3. What is the on-resistance (RDS(on)) of the IRLML6302TRPBF?

    The on-resistance (RDS(on)) is 0.6 Ω @ VGS = 4.5 V, ID = 0.61 A.

  4. Is the IRLML6302TRPBF RoHS compliant?

    Yes, the IRLML6302TRPBF is RoHS compliant.

  5. What is the package type of the IRLML6302TRPBF?

    The package type is SOT-23.

  6. What is the power dissipation (PD) of the IRLML6302TRPBF?

    The power dissipation (PD) is 540 mW.

  7. What is the threshold voltage (VGS(th)) of the IRLML6302TRPBF?

    The threshold voltage (VGS(th)) is 1.5 V @ ID = 250 μA.

  8. Is the IRLML6302TRPBF still in production?

    No, the IRLML6302TRPBF is discontinued.

  9. What are some typical applications of the IRLML6302TRPBF?

    Typical applications include low-power switching, linear applications, and use in portable devices.

  10. Why is the SOT-23 package beneficial for the IRLML6302TRPBF?

    The SOT-23 package is beneficial because it is compact, making it ideal for space-constrained designs.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.45 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:97 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML6302TRPBF IRLML6402TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 780mA (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 600mOhm @ 610mA, 4.5V 65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.45 V 12 nC @ 5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 15 V 633 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 540mW (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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