Overview
The IRLML6401TRPBF is a P-Channel HEXFET Power MOSFET produced by Infineon Technologies. This device is part of the HEXFET family, known for its fast switching speed and ruggedized design. The IRLML6401TRPBF is packaged in the Micro3™ SOT-23 footprint, which is ideal for applications where printed circuit board space is limited. The low profile of less than 1.1mm makes it suitable for use in extremely thin application environments such as portable electronics and PCMCIA cards.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|
| VDS Drain-Source Voltage | - | - | -12 | V | - |
| ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V | - | - | -4.3 | A | - |
| ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V | - | - | -3.4 | A | - |
| IDM Pulsed Drain Current | - | - | -34 | A | - |
| PD @ TA = 25°C Power Dissipation | - | - | 1.3 | W | - |
| PD @ TA = 70°C Power Dissipation | - | - | 0.8 | W | - |
| RθJA Maximum Junction-to-Ambient Thermal Resistance | - | 75 | 100 | °C/W | - |
| VGS Gate-to-Source Voltage | - | - | ±8.0 | V | - |
| TJ, TSTG Junction and Storage Temperature Range | -55 | - | 150 | °C | - |
| RDS(on) On-Resistance | - | - | 0.05 | Ω | - |
Key Features
- Ultra Low On-Resistance: The IRLML6401TRPBF features an extremely low on-resistance of 0.05Ω, making it highly efficient for power management applications.
- Fast Switching Speed: Known for its fast switching capabilities, this MOSFET is suitable for high-frequency applications.
- Ruggedized Design: The device is designed with a ruggedized structure, enhancing its reliability and durability.
- Micro3™ SOT-23 Footprint: The compact Micro3™ package is ideal for space-constrained applications, with a low profile of less than 1.1mm.
- Lead-Free and RoHS Compliant: The device is lead-free and compliant with RoHS and halogen-free standards.
- Thermally Enhanced Large Pad Leadframe: This feature improves thermal dissipation, making the device more efficient in managing heat.
Applications
- Battery and Load Management: The IRLML6401TRPBF is well-suited for battery and load management systems due to its low on-resistance and fast switching speed.
- Portable Electronics: Its compact size and low profile make it ideal for use in portable electronics such as smartphones, tablets, and laptops.
- PCMCIA Cards: The device is suitable for use in PCMCIA cards and other thin application environments.
- Power Supply Systems: It can be used in various power supply systems where high efficiency and reliability are required.
Q & A
- What is the maximum drain-source voltage of the IRLML6401TRPBF?
The maximum drain-source voltage (VDS) is -12V.
- What is the continuous drain current at 25°C and 70°C?
The continuous drain current (ID) is -4.3A at 25°C and -3.4A at 70°C with VGS @ -4.5V.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is -34A.
- What is the power dissipation at 25°C and 70°C?
The power dissipation (PD) is 1.3W at 25°C and 0.8W at 70°C.
- What is the maximum junction-to-ambient thermal resistance?
The maximum junction-to-ambient thermal resistance (RθJA) is 100°C/W.
- What is the gate-to-source voltage range?
The gate-to-source voltage (VGS) range is ±8.0V.
- What is the junction and storage temperature range?
The junction and storage temperature range (TJ, TSTG) is -55°C to +150°C.
- Is the IRLML6401TRPBF lead-free and RoHS compliant?
Yes, the device is lead-free and compliant with RoHS and halogen-free standards.
- What package type is the IRLML6401TRPBF available in?
The device is available in the Micro3™ SOT-23 package.
- What are some typical applications of the IRLML6401TRPBF?
Typical applications include battery and load management, portable electronics, PCMCIA cards, and power supply systems.
