BC847CWH6778
  • Share:

Infineon Technologies BC847CWH6778

Manufacturer No:
BC847CWH6778
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWH6778 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of applications, particularly in audio frequency (AF) input stages and driver circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA mA
Total Power Dissipation Ptot 250 mW mW
Junction Temperature Tj -65 to 150 °C °C
Transition Frequency fT 250 MHz MHz
DC Current Gain (hFE) at IC = 2 mA, VCE = 5 V hFE 420
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V V
Base-Emitter Saturation Voltage VBE(sat) 0.7 V V

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Low noise characteristics between 30 Hz and 15 kHz, ideal for audio frequency applications.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC Q101, suitable for automotive applications.
  • Complementary types available (BC857...-BC860... for PNP transistors).

Applications

The BC847CWH6778 transistor is primarily used in:

  • Audio frequency (AF) input stages due to its low noise characteristics.
  • Driver applications where high current gain and low saturation voltage are required.
  • Automotive electronics, given its AEC Q101 qualification.
  • General-purpose amplification and switching circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC847CWH6778 transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BC847CWH6778 transistor?

    The maximum collector current is 100 mA.

  3. What is the transition frequency of the BC847CWH6778 transistor?

    The transition frequency is 250 MHz.

  4. Is the BC847CWH6778 transistor RoHS compliant?
  5. What are the typical applications of the BC847CWH6778 transistor?

    The transistor is typically used in AF input stages, driver applications, and general-purpose amplification and switching circuits.

  6. What is the DC current gain (hFE) of the BC847CWH6778 transistor at IC = 2 mA, VCE = 5 V?

    The DC current gain (hFE) is 420.

  7. What is the collector-emitter saturation voltage of the BC847CWH6778 transistor?

    The collector-emitter saturation voltage is 0.25 V.

  8. Is the BC847CWH6778 transistor qualified for automotive use?
  9. What is the junction temperature range for the BC847CWH6778 transistor?

    The junction temperature range is -65 to 150 °C.

  10. What is the total power dissipation of the BC847CWH6778 transistor?

    The total power dissipation is 250 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3-1
0 Remaining View Similar

In Stock

$0.04
912

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847CWH6778 BC847CWE6778
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V -
Power - Max 250 mW -
Frequency - Transition 250MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package PG-SOT323-3-1 -

Related Product By Categories

BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV70WE6327BTSA1
BAV70WE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC847PNB6327XT
BC847PNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC817K-16WH6327
BC817K-16WH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRF4905STRLPBF
IRF4905STRLPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW