BC847CWH6778
  • Share:

Infineon Technologies BC847CWH6778

Manufacturer No:
BC847CWH6778
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWH6778 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of applications, particularly in audio frequency (AF) input stages and driver circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA mA
Total Power Dissipation Ptot 250 mW mW
Junction Temperature Tj -65 to 150 °C °C
Transition Frequency fT 250 MHz MHz
DC Current Gain (hFE) at IC = 2 mA, VCE = 5 V hFE 420
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V V
Base-Emitter Saturation Voltage VBE(sat) 0.7 V V

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Low noise characteristics between 30 Hz and 15 kHz, ideal for audio frequency applications.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC Q101, suitable for automotive applications.
  • Complementary types available (BC857...-BC860... for PNP transistors).

Applications

The BC847CWH6778 transistor is primarily used in:

  • Audio frequency (AF) input stages due to its low noise characteristics.
  • Driver applications where high current gain and low saturation voltage are required.
  • Automotive electronics, given its AEC Q101 qualification.
  • General-purpose amplification and switching circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC847CWH6778 transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BC847CWH6778 transistor?

    The maximum collector current is 100 mA.

  3. What is the transition frequency of the BC847CWH6778 transistor?

    The transition frequency is 250 MHz.

  4. Is the BC847CWH6778 transistor RoHS compliant?
  5. What are the typical applications of the BC847CWH6778 transistor?

    The transistor is typically used in AF input stages, driver applications, and general-purpose amplification and switching circuits.

  6. What is the DC current gain (hFE) of the BC847CWH6778 transistor at IC = 2 mA, VCE = 5 V?

    The DC current gain (hFE) is 420.

  7. What is the collector-emitter saturation voltage of the BC847CWH6778 transistor?

    The collector-emitter saturation voltage is 0.25 V.

  8. Is the BC847CWH6778 transistor qualified for automotive use?
  9. What is the junction temperature range for the BC847CWH6778 transistor?

    The junction temperature range is -65 to 150 °C.

  10. What is the total power dissipation of the BC847CWH6778 transistor?

    The total power dissipation is 250 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3-1
0 Remaining View Similar

In Stock

$0.04
912

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847CWH6778 BC847CWE6778
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V -
Power - Max 250 mW -
Frequency - Transition 250MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package PG-SOT323-3-1 -

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BC857SH6327XTSA1
BC857SH6327XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363-6
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
BC860BWE6327
BC860BWE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC