BC847CWH6778
  • Share:

Infineon Technologies BC847CWH6778

Manufacturer No:
BC847CWH6778
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWH6778 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of applications, particularly in audio frequency (AF) input stages and driver circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA mA
Total Power Dissipation Ptot 250 mW mW
Junction Temperature Tj -65 to 150 °C °C
Transition Frequency fT 250 MHz MHz
DC Current Gain (hFE) at IC = 2 mA, VCE = 5 V hFE 420
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V V
Base-Emitter Saturation Voltage VBE(sat) 0.7 V V

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Low noise characteristics between 30 Hz and 15 kHz, ideal for audio frequency applications.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC Q101, suitable for automotive applications.
  • Complementary types available (BC857...-BC860... for PNP transistors).

Applications

The BC847CWH6778 transistor is primarily used in:

  • Audio frequency (AF) input stages due to its low noise characteristics.
  • Driver applications where high current gain and low saturation voltage are required.
  • Automotive electronics, given its AEC Q101 qualification.
  • General-purpose amplification and switching circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC847CWH6778 transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BC847CWH6778 transistor?

    The maximum collector current is 100 mA.

  3. What is the transition frequency of the BC847CWH6778 transistor?

    The transition frequency is 250 MHz.

  4. Is the BC847CWH6778 transistor RoHS compliant?
  5. What are the typical applications of the BC847CWH6778 transistor?

    The transistor is typically used in AF input stages, driver applications, and general-purpose amplification and switching circuits.

  6. What is the DC current gain (hFE) of the BC847CWH6778 transistor at IC = 2 mA, VCE = 5 V?

    The DC current gain (hFE) is 420.

  7. What is the collector-emitter saturation voltage of the BC847CWH6778 transistor?

    The collector-emitter saturation voltage is 0.25 V.

  8. Is the BC847CWH6778 transistor qualified for automotive use?
  9. What is the junction temperature range for the BC847CWH6778 transistor?

    The junction temperature range is -65 to 150 °C.

  10. What is the total power dissipation of the BC847CWH6778 transistor?

    The total power dissipation is 250 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3-1
0 Remaining View Similar

In Stock

$0.04
912

Please send RFQ , we will respond immediately.

Same Series
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847CWH6778 BC847CWE6778
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V -
Power - Max 250 mW -
Frequency - Transition 250MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package PG-SOT323-3-1 -

Related Product By Categories

BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BCX5516H6433XTMA1
BCX5516H6433XTMA1
Infineon Technologies
TRANS NPN 60V 1A SOT89
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
TLE7368EXUMA1
TLE7368EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I