BC847CWE6778
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Infineon Technologies BC847CWE6778

Manufacturer No:
BC847CWE6778
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWE6778 is an NPN Silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is part of the BC847 series, which is designed for general-purpose applications, particularly in audio frequency input stages and driver circuits. It is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-emitter saturation voltage VCE(sat) 0.25 - 0.6 V
Collector current IC 100 mA
Peak collector current (tp ≤ 10 ms) ICM 200 mA
Total power dissipation (TS ≤ 71 °C) Ptot 330 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 to 150 °C
DC current gain (IC = 2 mA, VCE = 5 V) hFE 200 - 420
Transition frequency (IC = 10 mA, VCE = 5 V, f = 100 MHz) fT 250 MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz) Ccb 0.95 pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) Ceb 9 pF

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power consumption and heat generation.
  • Low noise characteristics between 30 Hz and 15 kHz, ideal for audio frequency applications.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC Q101, indicating suitability for automotive applications.
  • Complementary PNP types available (BC857-BC860 series), allowing for balanced circuit designs.

Applications

  • Audio frequency input stages: The low noise and high current gain make it ideal for audio signal processing.
  • Driver applications: Suitable for driving small loads due to its low collector-emitter saturation voltage and high current gain.
  • General-purpose amplification: Can be used in various amplification circuits requiring low noise and high gain.
  • Automotive electronics: Qualified according to AEC Q101, making it suitable for use in automotive systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC847C transistor?

    The collector-emitter voltage rating (VCEO) of the BC847C transistor is 45 V.

  2. What is the typical DC current gain (hFE) of the BC847C transistor?

    The typical DC current gain (hFE) of the BC847C transistor is between 200 and 420 when IC = 2 mA and VCE = 5 V.

  3. What are the key features of the BC847C transistor?

    The key features include high current gain, low collector-emitter saturation voltage, low noise characteristics, Pb-free packaging, and qualification according to AEC Q101.

  4. What are the potential applications of the BC847C transistor?

    Potential applications include audio frequency input stages, driver applications, general-purpose amplification, and automotive electronics).

  5. What is the maximum collector current of the BC847C transistor?

    The maximum collector current (IC) of the BC847C transistor is 100 mA, with a peak collector current (ICM) of 200 mA for tp ≤ 10 ms).

  6. What is the junction temperature rating of the BC847C transistor?

    The junction temperature rating (Tj) of the BC847C transistor is 150 °C).

  7. Is the BC847C transistor RoHS compliant?

    Yes, the BC847C transistor is Pb-free and RoHS compliant).

  8. What is the transition frequency of the BC847C transistor?

    The transition frequency (fT) of the BC847C transistor is 250 MHz when IC = 10 mA and VCE = 5 V).

  9. What are the complementary PNP types for the BC847C transistor?

    The complementary PNP types for the BC847C transistor are BC857-BC860 series).

  10. What is the storage temperature range for the BC847C transistor?

    The storage temperature range (Tstg) for the BC847C transistor is -65 to 150 °C).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC847CWE6778 BC847CWH6778
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - NPN
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 45 V
Vce Saturation (Max) @ Ib, Ic - 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 420 @ 2mA, 5V
Power - Max - 250 mW
Frequency - Transition - 250MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - SC-70, SOT-323
Supplier Device Package - PG-SOT323-3-1

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