Overview
The IRLML2502TRPBF is a 20V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in the Micro3™ (SOT-23) package, making it ideal for applications where printed circuit board space is limited. The device is optimized for low-frequency applications and is known for its high performance, ruggedness, and industry-standard qualification level.
Key Specifications
Parameter | Min. | Typ. | Max. | Units |
---|---|---|---|---|
V(BR)DSS - Drain-to-Source Breakdown Voltage | - | - | 20 | V |
RDS(on) - Static Drain-to-Source On-Resistance | - | 0.035 | 0.045 | Ω |
VGS(th) - Gate Threshold Voltage | 0.60 | - | 1.2 | V |
ID - Continuous Drain Current | - | - | - | A |
IS - Continuous Source Current (Body Diode) | - | - | - | A |
TJ - Junction Temperature | -55 | - | 150 | °C |
RθJA - Maximum Junction-to-Ambient Thermal Resistance | - | - | 100 | °C/W |
Key Features
- Planar cell structure for wide Safe Operating Area (SOA).
- Optimized for broadest availability from distribution partners.
- Product qualification according to JEDEC standard.
- Silicon optimized for applications switching below 100kHz.
- Industry standard surface-mount package (Micro3™).
- High performance in low frequency applications.
- Standard pinout allows for drop-in replacement.
- Thermally enhanced large pad leadframe for improved thermal performance.
- Low profile (<1.1mm) suitable for thin application environments such as portable electronics and PCMCIA cards.
Applications
- DC motors
- Inverters
- Switch-Mode Power Supplies (SMPS)
- Lighting
- Load switches
- Battery-powered applications
- Portable electronics
- PCMCIA cards
Q & A
- What is the maximum drain-to-source breakdown voltage of the IRLML2502TRPBF?
The maximum drain-to-source breakdown voltage is 20V.
- What is the typical static drain-to-source on-resistance of the IRLML2502TRPBF?
The typical static drain-to-source on-resistance is 0.035 Ω.
- What is the gate threshold voltage range of the IRLML2502TRPBF?
The gate threshold voltage range is from 0.60V to 1.2V.
- What is the maximum junction temperature for the IRLML2502TRPBF?
The maximum junction temperature is 150°C).
- What package type is used for the IRLML2502TRPBF?
The package type is Micro3™ (SOT-23)).
- What are some common applications for the IRLML2502TRPBF?
Common applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).
- What is the thermal resistance (RθJA) of the IRLML2502TRPBF?
The maximum junction-to-ambient thermal resistance is 100°C/W).
- Is the IRLML2502TRPBF suitable for high-frequency applications?
No, it is optimized for applications switching below 100kHz).
- What is the benefit of the planar cell structure in the IRLML2502TRPBF?
The planar cell structure provides a wide Safe Operating Area (SOA)).
- Is the IRLML2502TRPBF qualified according to any industry standards?
Yes, it is qualified according to JEDEC standard).