IRLML2502TRPBF
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Infineon Technologies IRLML2502TRPBF

Manufacturer No:
IRLML2502TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 4.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML2502TRPBF is a 20V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in the Micro3™ (SOT-23) package, making it ideal for applications where printed circuit board space is limited. The device is optimized for low-frequency applications and is known for its high performance, ruggedness, and industry-standard qualification level.

Key Specifications

Parameter Min. Typ. Max. Units
V(BR)DSS - Drain-to-Source Breakdown Voltage - - 20 V
RDS(on) - Static Drain-to-Source On-Resistance - 0.035 0.045 Ω
VGS(th) - Gate Threshold Voltage 0.60 - 1.2 V
ID - Continuous Drain Current - - - A
IS - Continuous Source Current (Body Diode) - - - A
TJ - Junction Temperature -55 - 150 °C
RθJA - Maximum Junction-to-Ambient Thermal Resistance - - 100 °C/W

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA).
  • Optimized for broadest availability from distribution partners.
  • Product qualification according to JEDEC standard.
  • Silicon optimized for applications switching below 100kHz.
  • Industry standard surface-mount package (Micro3™).
  • High performance in low frequency applications.
  • Standard pinout allows for drop-in replacement.
  • Thermally enhanced large pad leadframe for improved thermal performance.
  • Low profile (<1.1mm) suitable for thin application environments such as portable electronics and PCMCIA cards.

Applications

  • DC motors
  • Inverters
  • Switch-Mode Power Supplies (SMPS)
  • Lighting
  • Load switches
  • Battery-powered applications
  • Portable electronics
  • PCMCIA cards

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRLML2502TRPBF?

    The maximum drain-to-source breakdown voltage is 20V.

  2. What is the typical static drain-to-source on-resistance of the IRLML2502TRPBF?

    The typical static drain-to-source on-resistance is 0.035 Ω.

  3. What is the gate threshold voltage range of the IRLML2502TRPBF?

    The gate threshold voltage range is from 0.60V to 1.2V.

  4. What is the maximum junction temperature for the IRLML2502TRPBF?

    The maximum junction temperature is 150°C).

  5. What package type is used for the IRLML2502TRPBF?

    The package type is Micro3™ (SOT-23)).

  6. What are some common applications for the IRLML2502TRPBF?

    Common applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  7. What is the thermal resistance (RθJA) of the IRLML2502TRPBF?

    The maximum junction-to-ambient thermal resistance is 100°C/W).

  8. Is the IRLML2502TRPBF suitable for high-frequency applications?

    No, it is optimized for applications switching below 100kHz).

  9. What is the benefit of the planar cell structure in the IRLML2502TRPBF?

    The planar cell structure provides a wide Safe Operating Area (SOA)).

  10. Is the IRLML2502TRPBF qualified according to any industry standards?

    Yes, it is qualified according to JEDEC standard).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.50
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Similar Products

Part Number IRLML2502TRPBF IRLML2402TRPBF IRLML2502GTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 1.2A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.7V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 4.5V 250mOhm @ 930mA, 4.5V 45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 700mV @ 250µA (Min) 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 3.9 nC @ 4.5 V 12 nC @ 5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 15 V 110 pF @ 15 V 740 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.25W (Ta) 540mW (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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