BSS138NH6433XTMA1
  • Share:

Infineon Technologies BSS138NH6433XTMA1

Manufacturer No:
BSS138NH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138NH6433XTMA1 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the SIPMOS family and is known for its logic-level gate drive and high dv/dt rating. It is packaged in a PG-SOT-23 package and is RoHS compliant, halogen-free, and qualified according to AEC Q101 standards. This MOSFET is suitable for a variety of applications requiring low on-state resistance and high reliability.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Continuous Drain CurrentI_DT_A = 25 °CA--0.23
Pulsed Drain CurrentI_D,pulseT_A = 25 °CA--0.92
Drain-Source Breakdown VoltageV(BR)DSSV_GS = 0 V, I_D = 250 µAV60--
Gate Threshold VoltageV_GS(th)V_GS = V_DS, I_D = 26 µAV0.61.01.4
Drain-Source On-State ResistanceR_DS(on)V_GS = 4.5 V, I_D = 0.03 AΩ-3.34.0
Operating and Storage TemperatureT_j, T_stg-°C-55-150
Thermal Resistance, Junction to AmbientR_thJA-K/W--350

Key Features

  • N-channel enhancement mode MOSFET
  • Logic-level gate drive
  • High dv/dt rating
  • Pb-free lead-plating, RoHS compliant, and halogen-free
  • Qualified according to AEC Q101 standards
  • Low on-state resistance (R_DS(on))
  • High reliability and robustness

Applications

The BSS138NH6433XTMA1 is suitable for various applications including but not limited to:

  • Low-power switching circuits
  • Logic circuits and interfaces
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics requiring high reliability and low power consumption

Q & A

  1. What is the continuous drain current of the BSS138NH6433XTMA1 at 25°C?
    The continuous drain current is 0.23 A at 25°C.
  2. What is the maximum drain-source breakdown voltage?
    The maximum drain-source breakdown voltage is 60 V.
  3. What is the typical gate threshold voltage?
    The typical gate threshold voltage is 1.0 V.
  4. What is the maximum on-state resistance at V_GS = 4.5 V and I_D = 0.03 A?
    The maximum on-state resistance is 4.0 Ω.
  5. Is the BSS138NH6433XTMA1 RoHS compliant?
    Yes, it is RoHS compliant and halogen-free.
  6. What is the operating temperature range?
    The operating temperature range is -55°C to 150°C.
  7. What is the thermal resistance, junction to ambient?
    The thermal resistance, junction to ambient, is 350 K/W.
  8. What are some common applications for the BSS138NH6433XTMA1?
    Common applications include low-power switching circuits, logic circuits, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  9. Is the BSS138NH6433XTMA1 qualified according to any automotive standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the package type of the BSS138NH6433XTMA1?
    The package type is PG-SOT-23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
2,120

Please send RFQ , we will respond immediately.

Same Series
BSS138NH6433XTMA1
BSS138NH6433XTMA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NH6327XTSA2
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS138N-E6327
BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E6908
BSS138N E6908
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E7854
BSS138N E7854
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E8004
BSS138N E8004
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6327HTSA1
BSS138NL6327HTSA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6433HTMA1
BSS138NL6433HTMA1
MOSFET N-CH 60V 230MA SOT23-3

Similar Products

Part Number BSS138NH6433XTMA1 BSS138WH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 230mA, 10V 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 41 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BC817K-16WH6327
BC817K-16WH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I