BSS138NH6433XTMA1
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Infineon Technologies BSS138NH6433XTMA1

Manufacturer No:
BSS138NH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138NH6433XTMA1 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the SIPMOS family and is known for its logic-level gate drive and high dv/dt rating. It is packaged in a PG-SOT-23 package and is RoHS compliant, halogen-free, and qualified according to AEC Q101 standards. This MOSFET is suitable for a variety of applications requiring low on-state resistance and high reliability.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Continuous Drain CurrentI_DT_A = 25 °CA--0.23
Pulsed Drain CurrentI_D,pulseT_A = 25 °CA--0.92
Drain-Source Breakdown VoltageV(BR)DSSV_GS = 0 V, I_D = 250 µAV60--
Gate Threshold VoltageV_GS(th)V_GS = V_DS, I_D = 26 µAV0.61.01.4
Drain-Source On-State ResistanceR_DS(on)V_GS = 4.5 V, I_D = 0.03 AΩ-3.34.0
Operating and Storage TemperatureT_j, T_stg-°C-55-150
Thermal Resistance, Junction to AmbientR_thJA-K/W--350

Key Features

  • N-channel enhancement mode MOSFET
  • Logic-level gate drive
  • High dv/dt rating
  • Pb-free lead-plating, RoHS compliant, and halogen-free
  • Qualified according to AEC Q101 standards
  • Low on-state resistance (R_DS(on))
  • High reliability and robustness

Applications

The BSS138NH6433XTMA1 is suitable for various applications including but not limited to:

  • Low-power switching circuits
  • Logic circuits and interfaces
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics requiring high reliability and low power consumption

Q & A

  1. What is the continuous drain current of the BSS138NH6433XTMA1 at 25°C?
    The continuous drain current is 0.23 A at 25°C.
  2. What is the maximum drain-source breakdown voltage?
    The maximum drain-source breakdown voltage is 60 V.
  3. What is the typical gate threshold voltage?
    The typical gate threshold voltage is 1.0 V.
  4. What is the maximum on-state resistance at V_GS = 4.5 V and I_D = 0.03 A?
    The maximum on-state resistance is 4.0 Ω.
  5. Is the BSS138NH6433XTMA1 RoHS compliant?
    Yes, it is RoHS compliant and halogen-free.
  6. What is the operating temperature range?
    The operating temperature range is -55°C to 150°C.
  7. What is the thermal resistance, junction to ambient?
    The thermal resistance, junction to ambient, is 350 K/W.
  8. What are some common applications for the BSS138NH6433XTMA1?
    Common applications include low-power switching circuits, logic circuits, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  9. Is the BSS138NH6433XTMA1 qualified according to any automotive standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the package type of the BSS138NH6433XTMA1?
    The package type is PG-SOT-23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS138NH6433XTMA1 BSS138WH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 230mA, 10V 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 41 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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