BSS138NH6433XTMA1
  • Share:

Infineon Technologies BSS138NH6433XTMA1

Manufacturer No:
BSS138NH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138NH6433XTMA1 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the SIPMOS family and is known for its logic-level gate drive and high dv/dt rating. It is packaged in a PG-SOT-23 package and is RoHS compliant, halogen-free, and qualified according to AEC Q101 standards. This MOSFET is suitable for a variety of applications requiring low on-state resistance and high reliability.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Continuous Drain CurrentI_DT_A = 25 °CA--0.23
Pulsed Drain CurrentI_D,pulseT_A = 25 °CA--0.92
Drain-Source Breakdown VoltageV(BR)DSSV_GS = 0 V, I_D = 250 µAV60--
Gate Threshold VoltageV_GS(th)V_GS = V_DS, I_D = 26 µAV0.61.01.4
Drain-Source On-State ResistanceR_DS(on)V_GS = 4.5 V, I_D = 0.03 AΩ-3.34.0
Operating and Storage TemperatureT_j, T_stg-°C-55-150
Thermal Resistance, Junction to AmbientR_thJA-K/W--350

Key Features

  • N-channel enhancement mode MOSFET
  • Logic-level gate drive
  • High dv/dt rating
  • Pb-free lead-plating, RoHS compliant, and halogen-free
  • Qualified according to AEC Q101 standards
  • Low on-state resistance (R_DS(on))
  • High reliability and robustness

Applications

The BSS138NH6433XTMA1 is suitable for various applications including but not limited to:

  • Low-power switching circuits
  • Logic circuits and interfaces
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics requiring high reliability and low power consumption

Q & A

  1. What is the continuous drain current of the BSS138NH6433XTMA1 at 25°C?
    The continuous drain current is 0.23 A at 25°C.
  2. What is the maximum drain-source breakdown voltage?
    The maximum drain-source breakdown voltage is 60 V.
  3. What is the typical gate threshold voltage?
    The typical gate threshold voltage is 1.0 V.
  4. What is the maximum on-state resistance at V_GS = 4.5 V and I_D = 0.03 A?
    The maximum on-state resistance is 4.0 Ω.
  5. Is the BSS138NH6433XTMA1 RoHS compliant?
    Yes, it is RoHS compliant and halogen-free.
  6. What is the operating temperature range?
    The operating temperature range is -55°C to 150°C.
  7. What is the thermal resistance, junction to ambient?
    The thermal resistance, junction to ambient, is 350 K/W.
  8. What are some common applications for the BSS138NH6433XTMA1?
    Common applications include low-power switching circuits, logic circuits, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  9. Is the BSS138NH6433XTMA1 qualified according to any automotive standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the package type of the BSS138NH6433XTMA1?
    The package type is PG-SOT-23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
2,120

Please send RFQ , we will respond immediately.

Same Series
BSS138NH6433XTMA1
BSS138NH6433XTMA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NH6327XTSA2
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS138N-E6327
BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E6908
BSS138N E6908
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E7854
BSS138N E7854
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E8004
BSS138N E8004
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6327HTSA1
BSS138NL6327HTSA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6433HTMA1
BSS138NL6433HTMA1
MOSFET N-CH 60V 230MA SOT23-3

Similar Products

Part Number BSS138NH6433XTMA1 BSS138WH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 230mA, 10V 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 41 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BCX53E6327
BCX53E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCX5616H6433XTMA1
BCX5616H6433XTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857BWE6327BTSA1
BC857BWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
BTS4142NHUMA1
BTS4142NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
BTS711L1NT
BTS711L1NT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20