BSS138N E6908
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Infineon Technologies BSS138N E6908

Manufacturer No:
BSS138N E6908
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The BSS138N E6908 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's extensive portfolio of N and P-Channel Small Signal MOSFETs, designed to meet the highest quality requirements in industry-standard packages. The BSS138N is particularly suited for automotive and industrial applications due to its high reliability, efficiency, and compact design.

Key Specifications

Parameter Symbol Conditions Value Unit
Drain-Source Voltage VDS - 60 V
Continuous Drain Current ID TA = 25°C 0.23 A
Pulsed Drain Current ID,pulse TA = 25°C 0.46 A
On-State Resistance RDS(on) VGS = 10 V 3.5 Ω
Gate-Source Voltage VGS - ±20 V
Thermal Resistance, Junction to Ambient RthJA Minimal footprint 350 K/W
Operating and Storage Temperature Tj, Tstg - -55 to 150 °C

Key Features

  • Enhancement Mode: The BSS138N operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: This MOSFET is designed for logic level operation, making it compatible with a wide range of digital circuits.
  • Avalanche Rated: The device is rated for avalanche conditions, providing robustness against transient voltage spikes.
  • Fast Switching: It offers fast switching times, making it suitable for high-frequency applications.
  • Dv/dt Rated: The MOSFET is rated for high dv/dt, ensuring reliable operation in environments with rapid voltage changes.
  • Pb-free and RoHS Compliant: The component features lead-free and halogen-free lead plating, adhering to RoHS and environmental standards.
  • Qualified According to Automotive Standards: It meets automotive quality standards, including AEC Q101, ensuring high reliability in automotive applications.
  • PPAP Capable: The component is capable of meeting Production Part Approval Process (PPAP) requirements.

Applications

  • LED Lighting: Suitable for LED lighting systems due to its high efficiency and fast switching capabilities.
  • ADAS (Advanced Driver Assistance Systems): Used in various ADAS applications in the automotive sector.
  • Body Control Units: Ideal for body control units in vehicles due to its reliability and compact size.
  • SMPS (Switch-Mode Power Supplies): Utilized in SMPS designs for efficient power management.
  • Motor Control: Employed in motor control circuits for small servo motors and other low voltage, low current applications.

Q & A

  1. What is the maximum drain-source voltage of the BSS138N?

    The maximum drain-source voltage (VDS) of the BSS138N is 60 V.

  2. What is the continuous drain current rating of the BSS138N at 25°C?

    The continuous drain current (ID) rating at 25°C is 0.23 A.

  3. What is the on-state resistance of the BSS138N when VGS = 10 V?

    The on-state resistance (RDS(on)) when VGS = 10 V is 3.5 Ω.

  4. Is the BSS138N RoHS compliant and halogen-free?

    Yes, the BSS138N is RoHS compliant and halogen-free.

  5. What are the typical applications of the BSS138N?

    The BSS138N is typically used in LED lighting, ADAS, body control units, SMPS, and motor control applications.

  6. What is the thermal resistance, junction to ambient, of the BSS138N?

    The thermal resistance, junction to ambient (RthJA), is 350 K/W for a minimal footprint.

  7. Is the BSS138N qualified according to automotive standards?

    Yes, the BSS138N is qualified according to automotive standards, including AEC Q101.

  8. What is the operating temperature range of the BSS138N?

    The operating and storage temperature range is -55°C to 150°C.

  9. What package type is the BSS138N available in?

    The BSS138N is available in the SOT-23 package.

  10. Does the BSS138N support fast switching?

    Yes, the BSS138N is designed for fast switching, making it suitable for high-frequency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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