BSS138N-E6327
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Infineon Technologies BSS138N-E6327

Manufacturer No:
BSS138N-E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138N-E6327 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the SIPMOS family and is known for its high reliability and performance in various applications. It is packaged in a SOT23 case, which is compact and suitable for space-constrained designs. The BSS138N-E6327 is RoHS compliant, halogen-free, and qualified according to AEC Q101, making it a reliable choice for automotive and industrial applications.

Key Specifications

Parameter Symbol Conditions Unit Min.
Drain-Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 µA V - - 60
Continuous Drain Current I_D T_A = 25 °C A - - 0.23
Pulsed Drain Current I_D,pulse T_A = 25 °C A - - 0.92
Gate-Source Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 26 µA V 0.6 1.0 1.4
Drain-Source On-State Resistance R_DS(on) V_GS = 4.5 V, I_D = 0.03 A Ω - 3.3 4.0
Power Dissipation P_tot T_A = 25 °C W - - 0.36
Operating and Storage Temperature T_j, T_stg - °C -55 - 150
Thermal Resistance, Junction to Ambient R_thJA - K/W - - 350

Key Features

  • N-Channel Enhancement Mode: The BSS138N-E6327 operates in enhancement mode, making it suitable for logic-level applications.
  • Logic Level: It can be driven directly by logic gates, simplifying circuit design.
  • dv/dt Rated: The MOSFET is rated for high dv/dt, ensuring robust performance in high-frequency applications.
  • Pb-free and RoHS Compliant: Lead-free and RoHS compliant, making it environmentally friendly and compliant with regulatory standards.
  • Halogen-Free: Compliant with IEC 61249-2-21, ensuring it is free from halogens.
  • Qualified According to AEC Q101: Meets automotive quality standards, ensuring high reliability.
  • Fast Switching: Offers fast switching times, making it suitable for high-speed applications.
  • Low R_DS(on): Provides low on-state resistance, enhancing efficiency and extending battery life in portable devices.

Applications

  • LED Lighting: Suitable for LED lighting systems due to its low R_DS(on) and fast switching capabilities.
  • Advanced Driver Assistance Systems (ADAS): Used in automotive ADAS systems for its reliability and performance.
  • Body Control Units: Ideal for body control units in vehicles due to its automotive-grade quality.
  • Switch-Mode Power Supplies (SMPS): Used in SMPS for its efficiency and fast switching times.
  • Motor Control: Suitable for motor control applications requiring high reliability and performance.

Q & A

  1. What is the package type of the BSS138N-E6327?

    The BSS138N-E6327 is packaged in a SOT23 case.

  2. What is the maximum drain-source breakdown voltage of the BSS138N-E6327?

    The maximum drain-source breakdown voltage is 60 V.

  3. What is the continuous drain current rating of the BSS138N-E6327 at 25°C?

    The continuous drain current rating is 0.23 A at 25°C.

  4. Is the BSS138N-E6327 RoHS compliant?

    Yes, the BSS138N-E6327 is RoHS compliant and lead-free.

  5. What are the operating and storage temperature ranges for the BSS138N-E6327?

    The operating and storage temperature ranges are from -55°C to 150°C.

  6. What is the typical on-state resistance of the BSS138N-E6327?

    The typical on-state resistance (R_DS(on)) is 3.3 Ω at V_GS = 4.5 V and I_D = 0.03 A.

  7. Is the BSS138N-E6327 qualified according to automotive standards?

    Yes, it is qualified according to AEC Q101.

  8. What are some common applications for the BSS138N-E6327?

    Common applications include LED lighting, ADAS, body control units, SMPS, and motor control.

  9. What is the thermal resistance, junction to ambient, for the BSS138N-E6327?

    The thermal resistance, junction to ambient, is 350 K/W.

  10. Is the BSS138N-E6327 halogen-free?

    Yes, the BSS138N-E6327 is halogen-free according to IEC 61249-2-21.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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