BSS138N E8004
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Infineon Technologies BSS138N E8004

Manufacturer No:
BSS138N E8004
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138N, produced by Infineon Technologies, is an N-channel small signal MOSFET designed for high efficiency and reliability in various automotive and industrial applications. This component is packaged in the compact SOT-23 format, making it ideal for space-constrained designs. With its enhancement mode and logic level operation, the BSS138N offers fast switching capabilities and is avalanche rated, ensuring robust performance under different operating conditions.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-Source Breakdown VoltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate Threshold VoltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-Source On-State ResistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-3.34.0
Drain-Source On-State ResistanceR DS(on)V GS = 4.5 V, I D = 0.19 AΩ-3.56.0
Gate-Source VoltageV GS-V--±20
Operating and Storage TemperatureT j, T stg-°C-55-150
Power DissipationP totT A = 25 °CW--0.36

Key Features

  • Enhancement mode operation
  • Logic level gate drive
  • Avalanche rated for robustness
  • Fast switching capabilities
  • Dv/dt rated for high reliability
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards and PPAP capable
  • Low R DS(on) for higher efficiency and extended battery life
  • Compact SOT-23 package to save PCB space

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control systems

Q & A

  1. What is the BSS138N MOSFET used for? The BSS138N is used in various automotive and industrial applications, including LED lighting, ADAS, body control units, SMPS, and motor control.
  2. What is the package type of the BSS138N? The BSS138N is packaged in the SOT-23 format.
  3. What is the maximum drain-source breakdown voltage of the BSS138N? The maximum drain-source breakdown voltage is 60 V.
  4. What is the typical gate threshold voltage of the BSS138N? The typical gate threshold voltage is 1.0 V.
  5. Is the BSS138N RoHS compliant? Yes, the BSS138N is RoHS compliant and halogen-free.
  6. What is the maximum operating temperature of the BSS138N? The maximum operating temperature is 150 °C.
  7. What is the power dissipation of the BSS138N at 25 °C? The power dissipation is 0.36 W at 25 °C.
  8. Is the BSS138N qualified according to automotive standards? Yes, the BSS138N is qualified according to automotive standards and is PPAP capable.
  9. What are the benefits of the low R DS(on) in the BSS138N? The low R DS(on) provides higher efficiency and extends battery life.
  10. What are some of the key features of the BSS138N? Key features include enhancement mode operation, logic level gate drive, avalanche rating, fast switching, and compact packaging.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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