BSS138N E8004
  • Share:

Infineon Technologies BSS138N E8004

Manufacturer No:
BSS138N E8004
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138N, produced by Infineon Technologies, is an N-channel small signal MOSFET designed for high efficiency and reliability in various automotive and industrial applications. This component is packaged in the compact SOT-23 format, making it ideal for space-constrained designs. With its enhancement mode and logic level operation, the BSS138N offers fast switching capabilities and is avalanche rated, ensuring robust performance under different operating conditions.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-Source Breakdown VoltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate Threshold VoltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-Source On-State ResistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-3.34.0
Drain-Source On-State ResistanceR DS(on)V GS = 4.5 V, I D = 0.19 AΩ-3.56.0
Gate-Source VoltageV GS-V--±20
Operating and Storage TemperatureT j, T stg-°C-55-150
Power DissipationP totT A = 25 °CW--0.36

Key Features

  • Enhancement mode operation
  • Logic level gate drive
  • Avalanche rated for robustness
  • Fast switching capabilities
  • Dv/dt rated for high reliability
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards and PPAP capable
  • Low R DS(on) for higher efficiency and extended battery life
  • Compact SOT-23 package to save PCB space

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control systems

Q & A

  1. What is the BSS138N MOSFET used for? The BSS138N is used in various automotive and industrial applications, including LED lighting, ADAS, body control units, SMPS, and motor control.
  2. What is the package type of the BSS138N? The BSS138N is packaged in the SOT-23 format.
  3. What is the maximum drain-source breakdown voltage of the BSS138N? The maximum drain-source breakdown voltage is 60 V.
  4. What is the typical gate threshold voltage of the BSS138N? The typical gate threshold voltage is 1.0 V.
  5. Is the BSS138N RoHS compliant? Yes, the BSS138N is RoHS compliant and halogen-free.
  6. What is the maximum operating temperature of the BSS138N? The maximum operating temperature is 150 °C.
  7. What is the power dissipation of the BSS138N at 25 °C? The power dissipation is 0.36 W at 25 °C.
  8. Is the BSS138N qualified according to automotive standards? Yes, the BSS138N is qualified according to automotive standards and is PPAP capable.
  9. What are the benefits of the low R DS(on) in the BSS138N? The low R DS(on) provides higher efficiency and extends battery life.
  10. What are some of the key features of the BSS138N? Key features include enhancement mode operation, logic level gate drive, avalanche rating, fast switching, and compact packaging.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
71

Please send RFQ , we will respond immediately.

Same Series
BSS138NH6433XTMA1
BSS138NH6433XTMA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NH6327XTSA2
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS138N-E6327
BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E6908
BSS138N E6908
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E7854
BSS138N E7854
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E8004
BSS138N E8004
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6327HTSA1
BSS138NL6327HTSA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6433HTMA1
BSS138NL6433HTMA1
MOSFET N-CH 60V 230MA SOT23-3

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB

Related Product By Brand

BAS16B5003
BAS16B5003
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS16B5000
BAS16B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS21E6359HTMA1
BAS21E6359HTMA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC807-25WE6327
BC807-25WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCX56-16E6433
BCX56-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP
CY7C67300-100AXIT
CY7C67300-100AXIT
Infineon Technologies
IC USB HOST/PERIPH CNTRL 100LQFP