BSS138N E7854
  • Share:

Infineon Technologies BSS138N E7854

Manufacturer No:
BSS138N E7854
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138N, produced by Infineon Technologies, is an N-channel small signal MOSFET designed for high efficiency and reliability in various automotive and industrial applications. This component is packaged in the SOT-23 format, making it ideal for space-constrained designs. With its enhancement mode and logic level characteristics, the BSS138N is well-suited for applications requiring fast switching and low on-state resistance.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-source breakdown voltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate threshold voltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-3.34.0
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.19 AΩ-3.56.0
Gate-source voltageV GS-V--±20
Operating and storage temperatureT j, T stg-°C-55-150
Power dissipationP totT A = 25 °CW--0.36

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable
  • Low R DS(on) for higher efficiency and extended battery life
  • Small SOT-23 package saves PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control

Q & A

  1. What is the drain-source breakdown voltage of the BSS138N?
    The drain-source breakdown voltage of the BSS138N is 60 V.
  2. What is the typical gate threshold voltage of the BSS138N?
    The typical gate threshold voltage of the BSS138N is 1.0 V.
  3. What is the maximum drain-source on-state resistance of the BSS138N at V GS = 4.5 V and I D = 0.19 A?
    The maximum drain-source on-state resistance of the BSS138N at V GS = 4.5 V and I D = 0.19 A is 6.0 Ω.
  4. Is the BSS138N RoHS compliant?
    Yes, the BSS138N is RoHS compliant and halogen-free.
  5. What is the operating temperature range of the BSS138N?
    The operating temperature range of the BSS138N is -55 °C to 150 °C.
  6. What is the maximum power dissipation of the BSS138N at T A = 25 °C?
    The maximum power dissipation of the BSS138N at T A = 25 °C is 0.36 W.
  7. What are some common applications of the BSS138N?
    The BSS138N is commonly used in LED lighting, ADAS, body control units, SMPS, and motor control.
  8. Is the BSS138N qualified according to automotive standards?
    Yes, the BSS138N is qualified according to automotive standards.
  9. What package type is the BSS138N available in?
    The BSS138N is available in the SOT-23 package.
  10. Does the BSS138N have Pb-free lead-plating?
    Yes, the BSS138N has Pb-free lead-plating.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
366

Please send RFQ , we will respond immediately.

Same Series
BSS138NH6433XTMA1
BSS138NH6433XTMA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NH6327XTSA2
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS138N-E6327
BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E6908
BSS138N E6908
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E7854
BSS138N E7854
MOSFET N-CH 60V 230MA SOT23-3
BSS138N E8004
BSS138N E8004
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6327HTSA1
BSS138NL6327HTSA1
MOSFET N-CH 60V 230MA SOT23-3
BSS138NL6433HTMA1
BSS138NL6433HTMA1
MOSFET N-CH 60V 230MA SOT23-3

Related Product By Categories

IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
TLE6209RAUMA2
TLE6209RAUMA2
Infineon Technologies
IC MOTOR DRIVER 4.75V-5.5V 20DSO
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK