BSS138N E7854
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Infineon Technologies BSS138N E7854

Manufacturer No:
BSS138N E7854
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 230MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138N, produced by Infineon Technologies, is an N-channel small signal MOSFET designed for high efficiency and reliability in various automotive and industrial applications. This component is packaged in the SOT-23 format, making it ideal for space-constrained designs. With its enhancement mode and logic level characteristics, the BSS138N is well-suited for applications requiring fast switching and low on-state resistance.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-source breakdown voltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate threshold voltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-3.34.0
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.19 AΩ-3.56.0
Gate-source voltageV GS-V--±20
Operating and storage temperatureT j, T stg-°C-55-150
Power dissipationP totT A = 25 °CW--0.36

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable
  • Low R DS(on) for higher efficiency and extended battery life
  • Small SOT-23 package saves PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control

Q & A

  1. What is the drain-source breakdown voltage of the BSS138N?
    The drain-source breakdown voltage of the BSS138N is 60 V.
  2. What is the typical gate threshold voltage of the BSS138N?
    The typical gate threshold voltage of the BSS138N is 1.0 V.
  3. What is the maximum drain-source on-state resistance of the BSS138N at V GS = 4.5 V and I D = 0.19 A?
    The maximum drain-source on-state resistance of the BSS138N at V GS = 4.5 V and I D = 0.19 A is 6.0 Ω.
  4. Is the BSS138N RoHS compliant?
    Yes, the BSS138N is RoHS compliant and halogen-free.
  5. What is the operating temperature range of the BSS138N?
    The operating temperature range of the BSS138N is -55 °C to 150 °C.
  6. What is the maximum power dissipation of the BSS138N at T A = 25 °C?
    The maximum power dissipation of the BSS138N at T A = 25 °C is 0.36 W.
  7. What are some common applications of the BSS138N?
    The BSS138N is commonly used in LED lighting, ADAS, body control units, SMPS, and motor control.
  8. Is the BSS138N qualified according to automotive standards?
    Yes, the BSS138N is qualified according to automotive standards.
  9. What package type is the BSS138N available in?
    The BSS138N is available in the SOT-23 package.
  10. Does the BSS138N have Pb-free lead-plating?
    Yes, the BSS138N has Pb-free lead-plating.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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