BC847CE6327HTSA1
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Infineon Technologies BC847CE6327HTSA1

Manufacturer No:
BC847CE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CE6327HTSA1 is a high-performance NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose applications, particularly in audio frequency (AF) input stages and driver circuits. It is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics, making it suitable for a variety of electronic designs.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor
Package TypeSOT23 (Surface Mount)
Collector-Emitter Voltage (Vce)45 V
Collector Current (Ic)100 mA
Power Dissipation (Pd)200 mW
Frequency (fT)100 MHz
Collector-Emitter Saturation Voltage (Vce(sat))Low
Noise LevelLow noise between 30 Hz and 15 kHz
Complementary TypesBC857-BC860 (PNP)
RoHS CompliancePb-free (RoHS compliant)
AEC-Q101 QualificationQualified according to AEC Q101

Key Features

  • High current gain, ensuring efficient amplification and switching operations.
  • Low collector-emitter saturation voltage, reducing power losses and improving efficiency.
  • Low noise characteristics between 30 Hz and 15 kHz, making it ideal for audio frequency applications.
  • Pb-free (RoHS compliant) package, adhering to environmental regulations.
  • Qualified according to AEC Q101, ensuring reliability and quality for automotive and other demanding applications.

Applications

  • Audio frequency (AF) input stages: Suitable for amplifying audio signals with low noise and high fidelity.
  • Driver applications: Can be used to drive various loads such as speakers, LEDs, or other electronic components.
  • General-purpose amplification and switching: Versatile enough to be used in a wide range of electronic circuits requiring NPN transistors.

Q & A

  1. What is the transistor type of the BC847CE6327HTSA1?
    The BC847CE6327HTSA1 is an NPN silicon bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter voltage (Vce) of the BC847CE6327HTSA1?
    The maximum collector-emitter voltage (Vce) is 45 V.
  3. What is the maximum collector current (Ic) of the BC847CE6327HTSA1?
    The maximum collector current (Ic) is 100 mA.
  4. What is the power dissipation (Pd) of the BC847CE6327HTSA1?
    The power dissipation (Pd) is 200 mW.
  5. What is the frequency (fT) of the BC847CE6327HTSA1?
    The frequency (fT) is 100 MHz.
  6. Is the BC847CE6327HTSA1 RoHS compliant?
    Yes, the BC847CE6327HTSA1 is Pb-free (RoHS compliant).
  7. What are the complementary types of the BC847CE6327HTSA1?
    The complementary types are BC857-BC860 (PNP).
  8. What is the noise level of the BC847CE6327HTSA1?
    The BC847CE6327HTSA1 has low noise characteristics between 30 Hz and 15 kHz.
  9. Is the BC847CE6327HTSA1 qualified according to AEC Q101?
    Yes, the BC847CE6327HTSA1 is qualified according to AEC Q101.
  10. What are some potential applications of the BC847CE6327HTSA1?
    Potential applications include AF input stages, driver applications, and general-purpose amplification and switching.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC847CE6327HTSA1 BC847BE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 330 mW
Frequency - Transition 100MHz 250MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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