PDTC114TE,115
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NXP USA Inc. PDTC114TE,115

Manufacturer No:
PDTC114TE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC75
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PDTC114TE,115 is a pre-biased NPN transistor manufactured by NXP USA Inc. This component is designed for use in various electronic circuits, particularly where a simple and compact transistor solution is required. The transistor is packaged in an SC-89 (SOT-490) surface mount package, making it suitable for modern PCB designs.

Key Specifications

SpecificationValue
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic150 mV @ 500 µA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1 mA, 5 V
Current - Collector (Ic) (Max)100 mA
Peak DC Collector Current100 mA
Power - Max150 mW
Minimum Operating Temperature-65°C
Maximum Operating Temperature+150°C
Package / CaseSC-89 (SOT-490)
Mounting TypeSurface Mount
Resistor - Base (R1) (Ohms)10 kΩ

Key Features

  • Pre-biased NPN transistor, simplifying circuit design by integrating the base resistor.
  • Compact SC-89 (SOT-490) surface mount package, ideal for space-constrained applications.
  • High collector-emitter breakdown voltage of 50 V.
  • Low Vce saturation of 150 mV at specified conditions.
  • High DC current gain (hFE) of 200 at 1 mA and 5 V.
  • Wide operating temperature range from -65°C to +150°C.

Applications

The PDTC114TE,115 is suitable for a variety of applications, including:

  • General-purpose switching and amplification in electronic circuits.
  • Automotive and industrial control systems where compact and reliable transistor solutions are needed.
  • Consumer electronics, such as audio and video equipment.
  • Medical devices requiring precise and reliable transistor performance.

Q & A

  1. What is the transistor type of the PDTC114TE,115?
    The PDTC114TE,115 is an NPN pre-biased transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 50 V.
  3. What is the package type of the PDTC114TE,115?
    The package type is SC-89 (SOT-490).
  4. What is the maximum operating temperature of the PDTC114TE,115?
    The maximum operating temperature is +150°C.
  5. What is the DC current gain (hFE) of the PDTC114TE,115?
    The DC current gain (hFE) is 200 at 1 mA and 5 V.
  6. Is the PDTC114TE,115 still in production?
    No, the PDTC114TE,115 is obsolete and no longer manufactured.
  7. What are some common applications for the PDTC114TE,115?
    It is used in general-purpose switching, automotive and industrial control systems, consumer electronics, and medical devices.
  8. What is the power rating of the PDTC114TE,115?
    The maximum power rating is 150 mW.
  9. What is the minimum operating temperature of the PDTC114TE,115?
    The minimum operating temperature is -65°C.
  10. What is the peak DC collector current of the PDTC114TE,115?
    The peak DC collector current is 100 mA.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number PDTC114TE,115 PDTC114TU,115 PDTC114YE,115 PDTC124TE,115 PDTC115TE,115 PDTC114TEF,115 PDTC114TK,115 PDTC114EE,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 22 kOhms 100 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) - - 47 kOhms - - - - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 200 @ 1mA, 5V 100 @ 5mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 200 @ 1mA, 5V 200 @ 1mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - - 230 MHz
Power - Max 150 mW 200 mW 150 mW 150 mW 150 mW 150 mW 250 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Supplier Device Package SC-75 SOT-323 SC-75 SC-75 SC-75 SC-89 SMT3; MPAK SC-75

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