MMUN2111LT1G
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onsemi MMUN2111LT1G

Manufacturer No:
MMUN2111LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2111LT1G is a digital transistor produced by onsemi, designed to simplify circuit design by integrating the functionality of a single device and its external resistor bias network into one component. This PNP digital transistor is packaged in a 3-pin SOT-23 package, making it suitable for a variety of applications where space is limited. It is part of onsemi's series of digital transistors known as BRTs (Bipolar Resistive Transistors).

Key Specifications

ParameterValue
Package TypeSOT-23
PolarityPNP
Collector-Base Voltage (Vcbo)50V
Collector-Emitter Voltage (Vceo)50V
Emitter-Base Voltage (Vebo)5V
Continuous Collector Current (Ic)100mA
Power Dissipation (Pd)400mW
Operating Temperature Range-55°C to 150°C

Key Features

  • Integrated resistor bias network, eliminating the need for external resistors.
  • PNP digital transistor in a compact SOT-23 package.
  • High collector-base and collector-emitter voltage ratings of 50V.
  • Continuous collector current of 100mA and power dissipation of 400mW.
  • Suitable for automotive and other applications requiring robust performance in a small footprint.

Applications

The MMUN2111LT1G is versatile and can be used in various applications, including:

  • Automotive systems: Due to its robust performance and high voltage ratings, it is suitable for use in automotive electronics.
  • Consumer electronics: Ideal for use in devices where space is limited and reliability is crucial.
  • Industrial control systems: Can be used in control circuits and switching applications.
  • General-purpose switching: Suitable for any application requiring a reliable and compact digital transistor.

Q & A

  1. What is the package type of the MMUN2111LT1G? The MMUN2111LT1G is packaged in a 3-pin SOT-23 package.
  2. What is the polarity of the MMUN2111LT1G? The MMUN2111LT1G is a PNP digital transistor.
  3. What is the maximum collector current of the MMUN2111LT1G? The maximum continuous collector current is 100mA.
  4. What is the power dissipation of the MMUN2111LT1G? The power dissipation is 400mW.
  5. What is the operating temperature range of the MMUN2111LT1G? The operating temperature range is -55°C to 150°C.
  6. Does the MMUN2111LT1G require external resistors? No, it has an integrated resistor bias network, eliminating the need for external resistors.
  7. Is the MMUN2111LT1G suitable for automotive applications? Yes, it is suitable for automotive applications due to its robust performance and high voltage ratings.
  8. What are the typical applications of the MMUN2111LT1G? It can be used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.
  9. What is the collector-base voltage rating of the MMUN2111LT1G? The collector-base voltage rating is 50V.
  10. Is the MMUN2111LT1G RoHS compliant? Yes, the MMUN2111LT1G is RoHS compliant.

Product Attributes

Transistor Type:PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMUN2111LT1G MMUN2113LT1G MMUN2112LT1G MMUN2111LT3G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2211LT1G MMUN2131LT1G MMUN2141LT1G MMUN2111LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased + Diode PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 47 kOhms 22 kOhms 10 kOhms 10 kOhms 10 kOhms 4.7 kOhms 10 kOhms 2.2 kOhms 100 kOhms -
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms 22 kOhms 10 kOhms 47 kOhms - - 10 kOhms 2.2 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 8 @ 5mA, 10V 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 400 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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