Overview
The MMUN2111LT1 is a PNP silicon surface mount transistor with a monolithic bias resistor network, designed and manufactured by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, which integrates a single transistor with a series base resistor and a base-emitter resistor into a single package. This integration simplifies circuit design, reduces board space, and minimizes the component count. The MMUN2111LT1 is housed in the SOT-23 package, making it suitable for low power surface mount applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | 80 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | - | V |
Key Features
- Simplifies Circuit Design: Integrates the transistor and bias resistors into a single device, reducing the complexity of circuit design.
- Reduces Board Space: The SOT-23 package is compact, making it ideal for applications where space is limited.
- Reduces Component Count: By combining multiple components into one, it minimizes the number of parts needed in a circuit.
- Low Power Surface Mount Applications: Suitable for low power applications and can be soldered using wave or reflow techniques.
- Thermal Stress Absorption: The modified gull-winged leads absorb thermal stress during soldering, preventing damage to the die.
Applications
The MMUN2111LT1 is versatile and can be used in various electronic circuits, including:
- General-purpose switching and amplification.
- Low power consumer electronics.
- Automotive and industrial control systems.
- Medical devices requiring compact and reliable components.
Q & A
- What is the MMUN2111LT1?
The MMUN2111LT1 is a PNP silicon surface mount transistor with a monolithic bias resistor network.
- What package type does the MMUN2111LT1 use?
The MMUN2111LT1 is housed in the SOT-23 package.
- What are the key benefits of using the MMUN2111LT1?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the typical DC current gain (hFE) of the MMUN2111LT1?
The typical DC current gain (hFE) is 60.
- What is the collector-base breakdown voltage of the MMUN2111LT1?
The collector-base breakdown voltage is 50 Vdc.
- How is the MMUN2111LT1 soldered?
It can be soldered using wave or reflow techniques.
- What are some common applications of the MMUN2111LT1?
It is used in general-purpose switching, low power consumer electronics, automotive and industrial control systems, and medical devices.
- What is the collector-emitter saturation voltage of the MMUN2111LT1?
The collector-emitter saturation voltage (VCE(sat)) is not specified as a fixed value but can be found in the typical electrical characteristics section of the datasheet.
- Is the MMUN2111LT1 lead-free?
Yes, the 'G' suffix indicates that the package is lead-free.
- How does the MMUN2111LT1 handle thermal stress during soldering?
The modified gull-winged leads absorb thermal stress during soldering, preventing damage to the die.
