SMMUN2214LT1G
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onsemi SMMUN2214LT1G

Manufacturer No:
SMMUN2214LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMUN2214LT1G is an NPN bipolar digital transistor (BRT) produced by onsemi. This device is designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration reduces both system cost and board space. The SMMUN2214LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 Vdc
Collector-Emitter Voltage VCEO - - 50 Vdc
Collector Current - Continuous IC - - 100 mA mAdc
Input Forward Voltage VIN(fwd) - - 40 Vdc
Input Reverse Voltage VIN(rev) - - 6 Vdc
DC Current Gain hFE 80 140 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Voltage (off) Vi(off) - 0.7 0.5 Vdc
Input Voltage (on) Vi(on) 1.4 0.8 - Vdc
Input Resistor R1 R1 7.0 10 13 kΩ
Resistor Ratio R1/R2 R1/R2 0.17 0.21 0.25 -
Package Type - - - SOT-23 (TO-236) -

Key Features

  • Simplifies circuit design by integrating a single transistor with a monolithic bias resistor network.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Includes a series base resistor (R1) and a base-emitter resistor (R2) in a single device.

Applications

  • Automotive systems requiring AEC-Q101 qualification.
  • General-purpose digital switching applications.
  • Circuit designs where space and component count need to be minimized.
  • Industrial control systems.
  • Consumer electronics requiring compact and efficient transistor solutions.

Q & A

  1. What is the SMMUN2214LT1G?

    The SMMUN2214LT1G is an NPN bipolar digital transistor (BRT) produced by onsemi, designed to simplify circuit design and reduce board space.

  2. What are the key benefits of using the SMMUN2214LT1G?

    It simplifies circuit design, reduces board space, and reduces component count. It is also AEC-Q101 qualified and PPAP capable.

  3. What is the maximum collector-emitter voltage for the SMMUN2214LT1G?

    The maximum collector-emitter voltage (VCEO) is 50 Vdc.

  4. What is the continuous collector current rating for the SMMUN2214LT1G?

    The continuous collector current (IC) is 100 mA.

  5. What is the input voltage range for the SMMUN2214LT1G?

    The input forward voltage (VIN(fwd)) is up to 40 Vdc, and the input reverse voltage (VIN(rev)) is up to 6 Vdc.

  6. What are the resistor values integrated into the SMMUN2214LT1G?

    The device includes a series base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 47 kΩ.

  7. Is the SMMUN2214LT1G RoHS compliant?

    Yes, the SMMUN2214LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  8. What package type does the SMMUN2214LT1G come in?

    The SMMUN2214LT1G comes in a SOT-23 (TO-236) package.

  9. What are the thermal characteristics of the SMMUN2214LT1G?

    The total device dissipation at 25°C is 246 mW, and the thermal resistance from junction to ambient is 508 °C/W.

  10. What is the junction and storage temperature range for the SMMUN2214LT1G?

    The junction and storage temperature range is from -55°C to +150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SMMUN2214LT1G SMMUN2216LT1G SMMUN2234LT1G SMMUN2215LT1G SMMUN2114LT1G SMMUN2211LT1G SMMUN2213LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 4.7 kOhms 22 kOhms 10 kOhms 10 kOhms 10 kOhms 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms - 47 kOhms - 47 kOhms 10 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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