SMMUN2114LT1G
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onsemi SMMUN2114LT1G

Manufacturer No:
SMMUN2114LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMUN2114LT1G is a digital transistor from onsemi, part of the MUN2114 series. This device is designed to replace a single transistor and its external resistor bias network, integrating the resistors into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2114LT1G is particularly useful in applications requiring compact and efficient transistor solutions.

Key Specifications

Characteristic Symbol Max Unit
Total Device Dissipation (TA = 25°C) PD 246 mW
Derate above 25°C - 2.0 mW/°C
Thermal Resistance, Junction to Ambient RθJA 508 °C/W
Thermal Resistance, Junction to Lead RθJL 174 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Input Voltage (off) Vi(off) 0.7 Vdc
Input Voltage (on) Vi(on) 1.4 Vdc
Output Voltage (on) VOL 0.2 Vdc
Output Voltage (off) VOH 4.9 Vdc
Input Resistor R1 10 kΩ
Resistor Ratio R1/R2 0.21 -
Package - SOT-23 -
Shipping - 3,000 / Tape & Reel -

Key Features

  • Simplifies Circuit Design: Integrates the transistor and its external resistor bias network into a single device, reducing the complexity of circuit design.
  • Reduces Board Space: Compact packaging options such as SOT-23 reduce the overall board space required.
  • Reduces Component Count: By integrating the resistors, the total number of components in the circuit is decreased.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free Package: Available in lead-free packages, making it compliant with environmental regulations.

Applications

  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive applications.
  • Industrial Control Systems: Used in industrial control circuits where compact and efficient transistor solutions are required.
  • Consumer Electronics: Ideal for use in consumer electronics where space and component count are critical.
  • General Purpose Switching: Can be used in general-purpose switching applications due to its integrated resistor network.

Q & A

  1. What is the primary function of the SMMUN2114LT1G?

    The SMMUN2114LT1G is a digital transistor designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing component count.

  2. What package type is the SMMUN2114LT1G available in?

    The SMMUN2114LT1G is available in the SOT-23 package.

  3. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 246 mW.

  4. What is the thermal resistance from junction to ambient for the SOT-23 package?

    The thermal resistance from junction to ambient for the SOT-23 package is 508 °C/W.

  5. What is the input voltage range for the device to be in the 'on' state?

    The input voltage range for the device to be in the 'on' state is typically 1.4 Vdc.

  6. Is the SMMUN2114LT1G AEC-Q101 qualified?

    Yes, the SMMUN2114LT1G is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the junction and storage temperature range for the SMMUN2114LT1G?

    The junction and storage temperature range for the SMMUN2114LT1G is −55 to +150 °C.

  8. How many devices are shipped per reel?

    The SMMUN2114LT1G is shipped in quantities of 3,000 per tape and reel.

  9. What is the typical output voltage when the device is in the 'on' state?

    The typical output voltage when the device is in the 'on' state is 0.2 Vdc.

  10. Is the SMMUN2114LT1G available in Pb-free packages?

    Yes, the SMMUN2114LT1G is available in Pb-free packages.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.33
2,305

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Similar Products

Part Number SMMUN2114LT1G SMMUN2214LT1G SMMUN2116LT1G SMMUN2134LT1G SMMUN2111LT1G SMMUN2113LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 4.7 kOhms 22 kOhms 10 kOhms 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - 47 kOhms 10 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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