PDTC124ET,235
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Nexperia USA Inc. PDTC124ET,235

Manufacturer No:
PDTC124ET,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PDTC124ET,235 is a pre-biased bipolar transistor (BJT) manufactured by Nexperia USA Inc. This NPN transistor is designed for surface mount applications and is encapsulated in the SOT-23 (TO-236AB) package. It is suitable for a variety of high-voltage and high-current applications due to its robust specifications and compact design.

Key Specifications

ParameterValue
Transistor TypeNPN Pre-Biased Bipolar Transistor (BJT)
Maximum Collector-Emitter Voltage (Vce)50 V
Maximum Collector Current (Ic)100 mA
Maximum Power Dissipation (Pd)250 mW
Package TypeSOT-23 (TO-236AB) Surface Mount

Key Features

  • Pre-biased configuration simplifies circuit design by integrating the base resistor network within the transistor package.
  • Compact SOT-23 package, ideal for space-constrained applications.
  • High voltage capability (up to 50 V) makes it suitable for applications involving high voltage circuits and spikes.
  • Low power consumption with a maximum power dissipation of 250 mW.

Applications

  • Automotive electronics, particularly in 48V board nets and other high-voltage circuits.
  • Industrial control systems requiring robust and reliable transistor performance.
  • Consumer electronics where space and power efficiency are critical.
  • General-purpose switching and amplification applications.

Q & A

  1. What is the PDTC124ET,235 transistor type?
    The PDTC124ET,235 is an NPN pre-biased bipolar transistor (BJT).
  2. What is the maximum collector-emitter voltage of the PDTC124ET,235?
    The maximum collector-emitter voltage is 50 V.
  3. What is the maximum collector current of the PDTC124ET,235?
    The maximum collector current is 100 mA.
  4. What is the package type of the PDTC124ET,235?
    The package type is SOT-23 (TO-236AB) surface mount.
  5. What are the key applications of the PDTC124ET,235?
    Key applications include automotive electronics, industrial control systems, consumer electronics, and general-purpose switching and amplification.
  6. Why is the pre-biased configuration beneficial?
    The pre-biased configuration simplifies circuit design by integrating the base resistor network within the transistor package.
  7. What is the maximum power dissipation of the PDTC124ET,235?
    The maximum power dissipation is 250 mW.
  8. Is the PDTC124ET,235 suitable for high-voltage circuits?
    Yes, it is suitable for high-voltage circuits and can handle large spikes and pulses.
  9. What are the advantages of the SOT-23 package?
    The SOT-23 package is compact, making it ideal for space-constrained applications.
  10. Where can I find detailed specifications and datasheets for the PDTC124ET,235?
    Detailed specifications and datasheets can be found on official Nexperia websites, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC124ET,235 PDTC114ET,235 PDTC124ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V 30 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA
Frequency - Transition - 230 MHz -
Power - Max 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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