MMUN2133LT1G
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onsemi MMUN2133LT1G

Manufacturer No:
MMUN2133LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2133LT1G is a PNP digital transistor produced by onsemi. This component is part of the BRT (Bias Resistor Transistor) series, designed to replace a single device and its external resistor bias network, simplifying circuit design and reducing component count. It is packaged in a 3-pin SOT-23 package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
PolarityPNP
Collector Current (Ic)-100 mA
Collector-Emitter Voltage (Vce)-50 V
Base-Emitter Voltage (Vbe)-5 V
Package Type3-Pin SOT-23
Operating Temperature Range-55°C to 150°C

Key Features

  • Integrated bias resistor, eliminating the need for external resistors.
  • Compact 3-pin SOT-23 package for space-saving designs.
  • Low collector current of -100 mA, suitable for low-power applications.
  • High collector-emitter voltage of -50 V, providing robust performance.
  • Broad operating temperature range from -55°C to 150°C.

Applications

The MMUN2133LT1G is versatile and can be used in a variety of applications, including:

  • Low-power switching circuits.
  • Signal processing and amplification.
  • Automotive and industrial control systems.
  • Consumer electronics where compact design is crucial.

Q & A

  1. What is the polarity of the MMUN2133LT1G?
    The MMUN2133LT1G is a PNP digital transistor.
  2. What is the maximum collector current of the MMUN2133LT1G?
    The maximum collector current is -100 mA.
  3. What is the collector-emitter voltage rating of the MMUN2133LT1G?
    The collector-emitter voltage rating is -50 V.
  4. What package type is the MMUN2133LT1G available in?
    The MMUN2133LT1G is available in a 3-pin SOT-23 package.
  5. What is the operating temperature range of the MMUN2133LT1G?
    The operating temperature range is from -55°C to 150°C.
  6. What is the primary advantage of using the MMUN2133LT1G over traditional transistors?
    The primary advantage is the integrated bias resistor, which eliminates the need for external resistors and simplifies circuit design.
  7. Can the MMUN2133LT1G be used in high-power applications?
    No, the MMUN2133LT1G is designed for low-power applications due to its collector current rating of -100 mA.
  8. Is the MMUN2133LT1G suitable for automotive applications?
    Yes, the MMUN2133LT1G is suitable for automotive applications due to its robust performance and broad operating temperature range.
  9. Where can I purchase the MMUN2133LT1G?
    The MMUN2133LT1G can be purchased from various electronic component distributors such as Mouser, Digi-Key, and RS Components.
  10. What is the typical price range for the MMUN2133LT1G?
    The typical price range for the MMUN2133LT1G is around $0.14 to $0.15 per unit, depending on the quantity and distributor.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.15
5,630

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Part Number MMUN2133LT1G MMUN2137LT1G MMUN2134LT1G MMUN2135LT1G MMUN2233LT1G MMUN2138LT1G MMUN2136LT1G MMUN2113LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 47 kOhms 22 kOhms 2.2 kOhms 4.7 kOhms 2.2 kOhms 100 kOhms 47 kOhms 1 kOhms 2.2 kOhms 4.7 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 22 kOhms 47 kOhms 47 kOhms 47 kOhms - 100 kOhms 47 kOhms 1 kOhms 2.2 kOhms 4.7 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V 15 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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