Overview
The SMUN5133T1G is a digital transistor produced by onsemi, part of their series of Bias Resistor Transistors (BRT). This component integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes component count. The SMUN5133T1G is packaged in the SC-70/SOT-323 format and is lead-free, making it suitable for a variety of modern electronic designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | - | 3.3 | 4.7 | 6.1 | kΩ |
| Resistor Ratio R1/R2 | - | 0.08 | 0.1 | 0.14 | - |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 202 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 508 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact SC-70/SOT-323 packaging minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly processes.
- Lead-Free Packaging: Compliant with modern environmental standards, making it suitable for a wide range of applications.
- High Reliability: Designed with robust thermal characteristics and a wide junction and storage temperature range.
Applications
- General Purpose Switching: Suitable for various switching applications where a compact, reliable transistor is required.
- Automotive Electronics: Can be used in automotive systems due to its robust thermal and electrical characteristics.
- Consumer Electronics: Ideal for use in consumer devices where space and component count are critical.
- Industrial Control Systems: Applicable in industrial control circuits that require reliable and compact transistor solutions.
Q & A
- What is the SMUN5133T1G?
The SMUN5133T1G is a digital transistor with a monolithic bias resistor network, produced by onsemi.
- What are the key benefits of using the SMUN5133T1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the package type of the SMUN5133T1G?
The SMUN5133T1G is packaged in the SC-70/SOT-323 format.
- Is the SMUN5133T1G lead-free?
Yes, the SMUN5133T1G is lead-free, making it compliant with modern environmental standards.
- What is the maximum collector-emitter breakdown voltage of the SMUN5133T1G?
The maximum collector-emitter breakdown voltage is 50 V.
- What is the typical DC current gain (hFE) of the SMUN5133T1G?
The typical DC current gain (hFE) is 140.
- What is the maximum collector-emitter saturation voltage of the SMUN5133T1G?
The maximum collector-emitter saturation voltage is 0.25 V.
- What is the thermal resistance, junction to ambient, of the SMUN5133T1G?
The thermal resistance, junction to ambient, is 508 °C/W.
- What is the junction and storage temperature range of the SMUN5133T1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the SMUN5133T1G suitable for automotive applications?
Yes, it is suitable for automotive applications due to its robust thermal and electrical characteristics.
