SMUN5113T1G
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onsemi SMUN5113T1G

Manufacturer No:
SMUN5113T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5113T1G is a PNP bipolar digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias network consisting of two resistors. This Bias Resistor Transistor (BRT) simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. The device is packaged in a compact SC-70 (SOT-323) package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Current100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Mounting TypeSurface Mount
PackageSC-70, SOT-323
Power202 mW
Resistor47 kOhms
Supplier Device PackageSC-70-3 (SOT323)
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Voltage50 V
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias network, eliminating the need for external resistors.
  • Reduces Board Space: Compact SC-70 (SOT-323) package ideal for space-constrained designs.
  • Reduces Component Count: Combines multiple components into a single device, reducing overall component count.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • PbFree, Halogen Free/BFR Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The SMUN5113T1G is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Digital Switching Circuits: Ideal for applications requiring high current and voltage ratings.
  • Space-Constrained Designs: The compact SC-70 package makes it suitable for designs where board space is limited.
  • General Purpose Amplification: Can be used in various amplification circuits due to its pre-biased configuration.

Q & A

  1. What is the SMUN5113T1G transistor type?
    The SMUN5113T1G is a PNP bipolar digital transistor with a pre-biased configuration.
  2. What is the maximum collector-emitter voltage (Vce) of the SMUN5113T1G?
    The maximum collector-emitter voltage (Vce) is 50 V.
  3. What is the continuous collector current rating of the SMUN5113T1G?
    The continuous collector current rating is 100 mA.
  4. What is the power dissipation of the SMUN5113T1G?
    The power dissipation is 202 mW.
  5. What package type does the SMUN5113T1G come in?
    The SMUN5113T1G comes in a SC-70 (SOT-323) package.
  6. Is the SMUN5113T1G RoHS compliant?
    Yes, the SMUN5113T1G is PbFree, Halogen Free/BFR Free and RoHS compliant.
  7. What is the minimum operating temperature of the SMUN5113T1G?
    The minimum operating temperature is -55°C.
  8. What is the maximum operating temperature of the SMUN5113T1G?
    The maximum operating temperature is +150°C.
  9. Is the SMUN5113T1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  10. How does the SMUN5113T1G simplify circuit design?
    The SMUN5113T1G integrates a single transistor with a monolithic bias network, eliminating the need for external resistors and thus simplifying circuit design).

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number SMUN5113T1G SMUN5114T1G SMUN5115T1G SMUN5213T1G SMUN5133T1G SMUN2113T1G SMUN5111T1G SMUN5112T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Active Active Obsolete Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 47 kOhms 10 kOhms 10 kOhms 47 kOhms 4.7 kOhms 47 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - 47 kOhms 47 kOhms 47 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 202 mW 230 mW 202 mW 202 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59 SC-70-3 (SOT323) SC-70-3 (SOT323)

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