SMMUN2113LT1G
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onsemi SMMUN2113LT1G

Manufacturer No:
SMMUN2113LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMUN2113LT1G is a digital transistor from onsemi, part of their series of Bias Resistor Transistors (BRT). This device is designed to replace a single transistor and its external resistor bias network, integrating the resistors into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2113LT1G is particularly useful in applications requiring compact and efficient transistor solutions.

Key Specifications

Characteristic Symbol Value Unit
Input Voltage (off) Vi(off) 1.2 Vdc
Input Voltage (on) Vi(on) 3.0 Vdc
Output Voltage (on) VOL 0.2 Vdc
Output Voltage (off) VOH 4.9 Vdc
Input Resistor R1 47 kΩ kΩ
Resistor Ratio R1/R2 1.0
Total Device Dissipation (TA = 25°C) PD 246 mW mW
Thermal Resistance, Junction to Ambient RθJA 508 °C/W °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C °C
Package SOT-23 (Pb-Free)
Shipping 3000 / Tape & Reel

Key Features

  • Simplifies Circuit Design: Integrates the transistor and its bias resistors into a single device, reducing the need for external components.
  • Reduces Board Space: Compact SOT-23 package helps in minimizing the overall board size.
  • Reduces Component Count: By integrating the bias resistors, it decreases the total number of components required in the circuit.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for various automotive applications.
  • Consumer Electronics: Ideal for use in compact electronic devices where space is a constraint.
  • Industrial Control Systems: Can be used in industrial control circuits where reliability and compactness are crucial.
  • General Purpose Switching: Suitable for general-purpose switching applications requiring a compact transistor solution.

Q & A

  1. What is the primary function of the SMMUN2113LT1G?

    The SMMUN2113LT1G is a digital transistor that integrates a single transistor with a monolithic bias resistor network, replacing the need for external resistors.

  2. What package type does the SMMUN2113LT1G come in?

    The SMMUN2113LT1G comes in a SOT-23 package.

  3. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 246 mW.

  4. What is the thermal resistance from junction to ambient for the SOT-23 package?

    The thermal resistance from junction to ambient is 508 °C/W.

  5. Is the SMMUN2113LT1G RoHS compliant?
  6. What are the typical applications for the SMMUN2113LT1G?

    The SMMUN2113LT1G is typically used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.

  7. What is the input voltage range for the SMMUN2113LT1G?

    The input voltage range is from 1.2 V (off) to 3.0 V (on).

  8. What is the output voltage range for the SMMUN2113LT1G?

    The output voltage range is from 0.2 V (on) to 4.9 V (off).

  9. Is the SMMUN2113LT1G AEC-Q101 qualified?
  10. What is the junction and storage temperature range for the SMMUN2113LT1G?

    The junction and storage temperature range is from −55 to +150 °C.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number SMMUN2113LT1G SMMUN2114LT1G SMMUN2213LT1G SMMUN2116LT1G SMMUN2111LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 47 kOhms 10 kOhms 47 kOhms 4.7 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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