MUN2232T1G
  • Share:

onsemi MUN2232T1G

Manufacturer No:
MUN2232T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN2232T1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. It is part of the Bias Resistor Transistor (BRT) series, which combines a series base resistor and a base-emitter resistor into a single package.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter Saturation VoltageVCE(sat)--0.3V
Input Voltage (on)Vi(on)2.0-2.5Vdc
Input Voltage (off)Vi(off)--1.2Vdc
Output Voltage (on)VOL--0.2Vdc
Output Voltage (off)VOH--4.9Vdc
DC Current Gain (hFE)hFE60-140-
Thermal Resistance, Junction to AmbientRθJA--540°C/W
Junction and Storage Temperature RangeTJ, Tstg-55-150°C
Power DissipationPD--338mW

Key Features

  • Simplifies Circuit Design: Integrates the transistor and bias resistors into a single device, reducing the complexity of the circuit.
  • Reduces Board Space: By combining multiple components into one, it minimizes the space required on the PCB.
  • Reduces Component Count: Eliminates the need for external resistors, reducing the overall component count and system cost.
  • Monolithic Bias Resistor Network: Includes a series base resistor and a base-emitter resistor, ensuring stable and consistent operation.

Applications

  • General Purpose Switching: Suitable for various switching applications where a simple and reliable on/off function is required.
  • Automotive Systems: Can be used in automotive electronics due to its robust thermal characteristics and wide operating temperature range.
  • Consumer Electronics: Ideal for use in consumer electronic devices where space and component count are critical.
  • Industrial Control Systems: Used in industrial control circuits where reliability and simplicity are essential.

Q & A

  1. What is the MUN2232T1G? The MUN2232T1G is a digital transistor with an integrated monolithic bias resistor network produced by onsemi.
  2. What are the key benefits of using the MUN2232T1G? It simplifies circuit design, reduces board space, and decreases component count.
  3. What is the typical DC current gain (hFE) of the MUN2232T1G? The typical DC current gain (hFE) is between 60 and 140.
  4. What is the maximum collector-emitter saturation voltage (VCE(sat))? The maximum VCE(sat) is 0.3 V.
  5. What is the junction and storage temperature range of the MUN2232T1G? The junction and storage temperature range is from -55°C to 150°C.
  6. What is the maximum power dissipation (PD) of the MUN2232T1G? The maximum power dissipation is 338 mW.
  7. What are some common applications of the MUN2232T1G? It is used in general purpose switching, automotive systems, consumer electronics, and industrial control systems.
  8. How does the MUN2232T1G reduce system cost? By integrating the transistor and bias resistors into a single device, it reduces the overall component count and thus the system cost.
  9. What package types are available for the MUN2232T1G? It is available in SOT-23 and other similar packages.
  10. Is the MUN2232T1G suitable for high-temperature applications? Yes, it has a wide operating temperature range, making it suitable for high-temperature applications.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:338 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
0 Remaining View Similar

In Stock

$0.18
4,995

Please send RFQ , we will respond immediately.

Same Series
SMUN2232T1G
SMUN2232T1G
TRANS PREBIAS NPN 50V 100MA SC59
NSVMMUN2232LT1G
NSVMMUN2232LT1G
TRANS PREBIAS NPN 50V SOT23-3
MMUN2232LT1G
MMUN2232LT1G
TRANS PREBIAS NPN 50V SOT23-3
DTC143EET1G
DTC143EET1G
TRANS PREBIAS NPN 50V 100MA SC75
MUN5232T1G
MUN5232T1G
TRANS PREBIAS NPN 202MW SC70-3
DTC143EM3T5G
DTC143EM3T5G
TRANS PREBIAS NPN 50V SOT723
SMUN5232T1G
SMUN5232T1G
TRANS PREBIAS NPN 230MW SC70-3
NSVMMUN2232LT3G
NSVMMUN2232LT3G
TRANS PREBIAS NPN 0.246W SOT23
NSBC143EF3T5G
NSBC143EF3T5G
TRANS PREBIAS NPN 50V SOT1123

Similar Products

Part Number MUN2232T1G MUN2233T1G MUN5232T1G MUN2235T1G MUN2236T1G MUN2237T1G MUN2238T1G MUN2234T1G MUN2132T1G MUN2212T1G MUN2230T1G MUN2231T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete Obsolete Obsolete Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 2.2 kOhms 100 kOhms 47 kOhms 2.2 kOhms 22 kOhms 4.7 kOhms 22 kOhms 1 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms 4.7 kOhms 47 kOhms 100 kOhms 22 kOhms - 47 kOhms 4.7 kOhms 22 kOhms 1 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 60 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - - - -
Power - Max 338 mW 230 mW 202 mW 230 mW 338 mW 338 mW 230 mW 338 mW 230 mW 338 mW 338 mW 338 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59

Related Product By Categories

PDTC123JT,235
PDTC123JT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
PDTC114TT,235
PDTC114TT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
MUN5111T1G
MUN5111T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
SMUN5233T1G
SMUN5233T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
PDTA114YU,115
PDTA114YU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 50V SOT323
SMUN5111T1G
SMUN5111T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PDTB114ETVL
PDTB114ETVL
Nexperia USA Inc.
TRANS PREBIAS PNP 0.46W
PDTC115EE,115
PDTC115EE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC114EE,115
PDTC114EE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
MUN5211T1
MUN5211T1
onsemi
TRANS BRT NPN 50V SS MONO SOT323
PDTB123YT/APGR
PDTB123YT/APGR
Nexperia USA Inc.
PDTB123YT/APGR

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT