PDTA124EU,115
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Nexperia USA Inc. PDTA124EU,115

Manufacturer No:
PDTA124EU,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA124EU,115 is a pre-biased bipolar transistor (BJT) manufactured by Nexperia USA Inc. This PNP transistor is designed for surface mount applications and is housed in the SOT-323 package. It is characterized by its built-in bias resistors, which simplify circuit design and reduce the number of external components required. The PDTA124EU,115 is suitable for a variety of electronic circuits, particularly those requiring amplification and switching functions.

Key Specifications

Parameter Value
Package / Case SOT-323
Polarity PNP
Collector-Emitter Breakdown Voltage (VCEO) 50 V
Max Collector Current 100 mA
Max Power Dissipation 200 mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature 260°C
Time @ Peak Reflow Temperature (Max) 40 seconds
RoHS Status RoHS3 Compliant
Lead Free Yes

Key Features

  • Built-in Bias Resistors: The PDTA124EU,115 includes built-in bias resistors with a fixed ratio, simplifying circuit design and reducing the need for external components.
  • Surface Mount Package: The SOT-323 package is suitable for surface mount applications, offering a compact and efficient way to integrate the transistor into electronic circuits.
  • High Reliability: The transistor is designed to operate within a wide temperature range (-65°C to 150°C) and has a high moisture sensitivity level (MSL) of 1, indicating unlimited exposure to ambient conditions.
  • Low Power Dissipation: With a maximum power dissipation of 200 mW, this transistor is suitable for applications where power efficiency is crucial.
  • Compliance with Regulations: The component is RoHS3 compliant and lead-free, ensuring it meets environmental and safety standards.

Applications

The PDTA124EU,115 is versatile and can be used in various electronic circuits, including:

  • Amplifier Circuits: Due to its high DC current gain, it is suitable for amplifying signals in audio and other electronic systems.
  • Switching Circuits: The transistor's switching capabilities make it ideal for digital logic and power control applications.
  • Automotive Electronics: Its robust design and wide operating temperature range make it suitable for use in automotive systems.
  • Consumer Electronics: It can be used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the package type of the PDTA124EU,115 transistor?

    The PDTA124EU,115 transistor is housed in the SOT-323 surface mount package.

  2. What is the polarity of the PDTA124EU,115 transistor?

    The PDTA124EU,115 is a PNP transistor.

  3. What is the maximum collector-emitter breakdown voltage (VCEO) of the PDTA124EU,115?

    The maximum collector-emitter breakdown voltage (VCEO) is 50 V.

  4. What is the maximum collector current of the PDTA124EU,115?

    The maximum collector current is 100 mA.

  5. What is the maximum power dissipation of the PDTA124EU,115?

    The maximum power dissipation is 200 mW.

  6. What is the DC current gain (hFE) of the PDTA124EU,115?

    The minimum DC current gain (hFE) is 80 at 5mA and 5V.

  7. What is the operating temperature range of the PDTA124EU,115?

    The operating temperature range is from -65°C to 150°C.

  8. Is the PDTA124EU,115 RoHS compliant?

    Yes, the PDTA124EU,115 is RoHS3 compliant.

  9. Does the PDTA124EU,115 contain lead?

    No, the PDTA124EU,115 is lead-free.

  10. What is the moisture sensitivity level (MSL) of the PDTA124EU,115?

    The moisture sensitivity level (MSL) is 1, indicating unlimited exposure to ambient conditions.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number PDTA124EU,115 PDTA144EU,115 PDTA124XU,115 PDTA114EU,115 PDTA124EE,115 PDTA124EK,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 47 kOhms 22 kOhms 10 kOhms 22 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 47 kOhms 47 kOhms 10 kOhms 22 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V 80 @ 5mA, 5V 80 @ 5mA, 5V 30 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - 180 MHz - -
Power - Max 200 mW 200 mW 200 mW 200 mW 150 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-75, SOT-416 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-323 SOT-323 SOT-323 SC-75 SMT3; MPAK

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