PDTA114EU/SNF
  • Share:

Nexperia USA Inc. PDTA114EU/SNF

Manufacturer No:
PDTA114EU/SNF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA114EU/SNF is a 50 V, 100 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it ideal for space-constrained applications. The built-in bias resistors simplify circuit design, reduce component count, and lower pick and place costs. It is a cost-saving alternative for the BC847 series in digital applications and is particularly suited for controlling IC inputs and switching loads in automotive and industrial segments.

Key Specifications

ParameterValue
Type NumberPDTA114EU
PackageSOT323 (SC-70)
Channel TypePNP
Output Current (I_C [max])100 mA
Collector-Emitter Voltage (V_CE)50 V
Bias Resistors (R1, R2)10 kΩ, 10 kΩ
Maximum Junction Temperature (T_j [max])150 °C
Total Power Dissipation (P_tot)200 mW
Frequency (f_T)180 MHz

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design and reduces component count
  • Reduces pick and place costs
  • Cost-saving alternative for BC847 series in digital applications
  • Small SOT323 (SC-70) package for space-constrained designs

Applications

The PDTA114EU/SNF is widely used in various applications, including:

  • Digital applications in automotive and industrial segments
  • Controlling IC inputs
  • Switching loads
  • General-purpose switching and amplification in consumer, mobile, and wearables

Q & A

  1. What is the maximum output current of the PDTA114EU/SNF?
    The maximum output current is 100 mA.
  2. What type of package does the PDTA114EU/SNF use?
    The component is packaged in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.
  3. What are the values of the built-in bias resistors?
    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.
  4. What is the maximum collector-emitter voltage (V_CE) of the PDTA114EU/SNF?
    The maximum collector-emitter voltage is 50 V.
  5. What is the maximum junction temperature (T_j [max]) of the PDTA114EU/SNF?
    The maximum junction temperature is 150 °C.
  6. Is the PDTA114EU/SNF automotive qualified?
    No, the PDTA114EU/SNF is not automotive qualified.
  7. What is the total power dissipation (P_tot) of the PDTA114EU/SNF?
    The total power dissipation is 200 mW.
  8. What is the frequency (f_T) of the PDTA114EU/SNF?
    The frequency is 180 MHz.
  9. What are some common applications of the PDTA114EU/SNF?
    Common applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.
  10. How does the PDTA114EU/SNF simplify circuit design?
    The built-in bias resistors simplify circuit design by reducing the need for external resistors, thus reducing component count and pick and place costs.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:180 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

-
460

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
SMUN5235T1G
SMUN5235T1G
onsemi
TRANS PREBIAS NPN 202MW SC70-3
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PDTC123TT,215
PDTC123TT,215
NXP USA Inc.
NOW NEXPERIA PDTC123TT - SMALL S
MUN2113T1G
MUN2113T1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
DTA114EET1G
DTA114EET1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC75
PDTB113ZT,215
PDTB113ZT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
DTA123JET1G
DTA123JET1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC75
PDTC114EMB,315
PDTC114EMB,315
Nexperia USA Inc.
TRANS PREBIAS NPN 50V DFN1006B-3
PDTC114TE,115
PDTC114TE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC123EEF,115
PDTC123EEF,115
NXP USA Inc.
TRANS PREBIAS NPN 250MW SC89
SMUN5113T1G
SMUN5113T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR