PDTD113ZT,215
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Nexperia USA Inc. PDTD113ZT,215

Manufacturer No:
PDTD113ZT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTD113ZT,215 is an NPN resistor-equipped transistor (RET) manufactured by Nexperia. This component is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications. It features built-in bias resistors with a typical resistance of 1 kΩ and 10 kΩ, respectively. The transistor is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package, measuring 2.9 x 1.3 x 1 mm.

This transistor is part of Nexperia’s extensive portfolio of bipolar transistors, which are widely used in automotive, industrial, and other sectors due to their efficiency, robustness, and reliability.

Key Specifications

Parameter Value
Type Number PDTD113ZT
Orderable Part Number PDTD113ZT,215
Package SOT23
Package Size (mm) 2.9 x 1.3 x 1
Channel Type NPN
Maximum Collector Current (IC) 500 mA
Typical Resistor Values (R1, R2) 1 kΩ, 10 kΩ
Maximum Power Dissipation (Ptot) 250 mW
Collector-Emitter Voltage (VCEO) 50 V
Maximum Junction Temperature (Tj) 150 °C
Automotive Qualified No (but see PDTD113ZT-Q for AEC-Q101 qualified version)

Key Features

  • Built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) to simplify circuit design and reduce component count.
  • 500 mA output current capability.
  • ±10 % resistor ratio tolerance.
  • Reduces pick and place costs due to the integrated resistors.
  • Cost-saving alternative for BC817 series in digital applications.
  • Control of IC inputs and switching loads.

Applications

The PDTD113ZT,215 is suitable for various digital applications in the automotive and industrial segments. It is particularly useful for controlling IC inputs and switching loads. The component’s small SOT23 package and integrated resistors make it ideal for applications where space and component count are critical.

Other potential applications include power management, computing, consumer electronics, and mobile devices, where the need for efficient and reliable transistor performance is paramount.

Q & A

  1. What is the PDTD113ZT,215 transistor?

    The PDTD113ZT,215 is an NPN resistor-equipped transistor (RET) with built-in bias resistors, designed for digital applications.

  2. What are the typical resistor values in the PDTD113ZT,215?

    The typical resistor values are R1 = 1 kΩ and R2 = 10 kΩ.

  3. What is the maximum collector current of the PDTD113ZT,215?

    The maximum collector current is 500 mA.

  4. What is the package type and size of the PDTD113ZT,215?

    The transistor is packaged in a SOT23 Surface-Mounted Device (SMD) plastic package, measuring 2.9 x 1.3 x 1 mm.

  5. Is the PDTD113ZT,215 automotive qualified?

    No, but there is an AEC-Q101 qualified version available as PDTD113ZT-Q.

  6. What are the benefits of using the PDTD113ZT,215?

    It simplifies circuit design, reduces component count, and reduces pick and place costs due to the integrated resistors.

  7. What are the common applications of the PDTD113ZT,215?

    It is commonly used in digital applications in automotive and industrial segments, as well as in controlling IC inputs and switching loads.

  8. How does the PDTD113ZT,215 compare to the BC817 series?

    The PDTD113ZT,215 is a cost-saving alternative to the BC817 series in digital applications.

  9. What is the maximum power dissipation of the PDTD113ZT,215?

    The maximum power dissipation is 250 mW.

  10. What is the maximum junction temperature of the PDTD113ZT,215?

    The maximum junction temperature is 150 °C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTD113ZT,215 PDTD113ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 1 kOhms 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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