Overview
The PDTC123EE,115 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is designed for surface mount applications and comes in a compact SC-75 (SOT-416) package. This transistor is suitable for various electronic projects requiring efficient switching due to its built-in biasing resistors and low input current requirement.
The device has been discontinued, but it remains available from various distributors. It supports a maximum voltage of 50 V, a current rating of 100 mA, and a power dissipation of 150 mW.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Pre-Biased | |
| Collector Current (Iᴄ) @ 25°C | 100 | mA |
| Collector Cut-off Current (Iᴄᴇs) (Max.) | 1 | µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA | |
| Collector-Emitter Breakdown Voltage (Max.) | 50 | V |
| Power - Max | 150 | mW |
| Resistor - Base (R1) | 2.2 kOhms | |
| Resistor - Emitter Base (R2) | 2.2 kOhms | |
| Package Type (Mfr.) | SC-75, SOT-416 | |
| Mounting Style | Surface Mount |
Key Features
- Built-in Bias Resistors: The transistor includes built-in bias resistors (R1 = 2.2 kOhm, R2 = 2.2 kOhm), simplifying circuit design and reducing the component count.
- Simplified Circuit Design: The integrated resistors make it easier to design and implement circuits, reducing the need for external components.
- Reduced Pick and Place Costs: With fewer components required, the manufacturing process is streamlined, reducing costs associated with pick and place operations.
- AEC-Q101 Qualified: This transistor meets the AEC-Q101 standard, ensuring it is suitable for automotive applications that require high reliability.
Applications
- General Purpose Switching and Amplification: The PDTC123EE,115 is versatile and can be used in various switching and amplification circuits.
- Inverter and Interface Circuits: It is suitable for use in inverter circuits and as an interface component in electronic systems.
- Circuit Driver: The transistor can be used to drive other circuits due to its efficient switching characteristics.
Q & A
- What is the maximum collector current of the PDTC123EE,115?
The maximum collector current is 100 mA.
- What is the collector-emitter breakdown voltage of the PDTC123EE,115?
The collector-emitter breakdown voltage is 50 V.
- What is the power dissipation of the PDTC123EE,115?
The maximum power dissipation is 150 mW.
- What type of package does the PDTC123EE,115 come in?
The transistor comes in a SC-75 (SOT-416) package.
- Is the PDTC123EE,115 AEC-Q101 qualified?
- What are the values of the built-in bias resistors?
The built-in bias resistors are R1 = 2.2 kOhms and R2 = 2.2 kOhms.
- What is the typical application of the PDTC123EE,115?
- Is the PDTC123EE,115 still in production?
- What is the Vce saturation voltage of the PDTC123EE,115?
The Vce saturation voltage is 150 mV at 500 µA and 10 mA.
- What is the minimum DC current gain (hFE) of the PDTC123EE,115?
The minimum DC current gain (hFE) is 30 at 20 mA and 5 V.
