MUN5211T1
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onsemi MUN5211T1

Manufacturer No:
MUN5211T1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS BRT NPN 50V SS MONO SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5211T1 is a dual NPN silicon bias resistor transistor produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5211T1 is particularly useful in applications where space and component count are critical factors.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base VoltageVCBO50Vdc
Collector-Emitter VoltageVCEO50Vdc
Collector Current - ContinuousIC100mAdc
Input Forward VoltageVIN(fwd)40Vdc
Input Reverse VoltageVIN(rev)10Vdc
Input Resistor R17.01013
Resistor Ratio R1/R20.81.01.2
Total Device Dissipation (TA = 25°C)PD187mW
Thermal Resistance, Junction to AmbientRθJA670°C/W
Junction and Storage Temperature RangeTJ, Tstg−55+150°C

Key Features

  • Simplifies Circuit Design: Integrates a transistor with a monolithic bias resistor network, reducing the need for external resistors.
  • Reduces Board Space: Compact package options such as SOT-363, SOT-563, and SOT-963 reduce the overall footprint.
  • Reduces Component Count: Combines multiple components into a single device, simplifying the Bill of Materials (BOM).
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Meets environmental and regulatory requirements.

Applications

The MUN5211T1 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Consumer Electronics: Ideal for devices where space and component count are critical, such as in smartphones, tablets, and other portable electronics.
  • Industrial Control Systems: Can be used in control circuits, sensor interfaces, and other industrial automation applications.
  • Medical Devices: Its compact size and reliability make it a good fit for medical equipment and diagnostic devices.

Q & A

  1. What is the MUN5211T1?

    The MUN5211T1 is a dual NPN silicon bias resistor transistor produced by onsemi, integrating a transistor with a monolithic bias resistor network.

  2. What are the key benefits of using the MUN5211T1?

    It simplifies circuit design, reduces board space, and decreases the overall component count.

  3. What are the maximum ratings for the MUN5211T1?

    The maximum collector-base voltage and collector-emitter voltage are both 50 Vdc, and the maximum continuous collector current is 100 mAdc.

  4. Is the MUN5211T1 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

  5. What are the package options available for the MUN5211T1?

    The device is available in SOT-363, SOT-563, and SOT-963 packages.

  6. Is the MUN5211T1 environmentally compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  7. What is the thermal resistance of the MUN5211T1?

    The thermal resistance, junction to ambient, is approximately 670 °C/W for the SOT-363 package.

  8. What is the junction and storage temperature range for the MUN5211T1?

    The junction and storage temperature range is −55 to +150 °C.

  9. Can the MUN5211T1 be used in industrial control systems?

    Yes, it can be used in control circuits, sensor interfaces, and other industrial automation applications.

  10. Is the MUN5211T1 suitable for medical devices?

    Yes, its compact size and reliability make it a good fit for medical equipment and diagnostic devices.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:310 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number MUN5211T1 MUN5211T1G MUN5214T1 MUN5215T1 MUN5216T1 MUN5231T1 MUN2211T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 10 kOhms 4.7 kOhms 2.2 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 47 kOhms - - 2.2 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 8 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 310 mW 202 mW 202 mW 202 mW 202 mW 202 mW 338 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59

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