PDTC123JE,115
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NXP USA Inc. PDTC123JE,115

Manufacturer No:
PDTC123JE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC75
Delivery:
Payment:
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Product Introduction

Overview

The PDTC123JE,115 is a pre-biased NPN transistor produced by NXP USA Inc. This component is now obsolete and no longer manufactured, but it was widely used in various electronic circuits due to its integrated bias resistors. The transistor was designed to simplify circuit design and reduce the component count, making it a cost-effective solution for many applications.

Key Specifications

Parameter Value
Transistor Type NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150 mV @ 500 µA, 10 mA
Resistor - Emitter Base (R2) (Ohms) 47 kΩ
Resistor - Base (R1) (Ohms) 2.2 kΩ
Power - Max 150 mW
Current - Collector (Ic) (Max) 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20 mA, 5 V
Package / Case SC75 (SOT416)
Mounting Type Surface Mount

Key Features

  • Integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) to simplify circuit design and reduce component count.
  • Cost-saving alternative for BC847 series in digital applications.
  • Capable of controlling IC inputs and switching loads.
  • Surface-mount package (SC75/SOT416) for compact design.
  • Maximum collector current of 100 mA and collector-emitter voltage of 50 V.

Applications

The PDTC123JE,115 was commonly used in various digital applications, including:

  • Controlling IC inputs.
  • Switching loads in industrial and consumer electronics.
  • General-purpose switching and amplification in electronic circuits.

Q & A

  1. What is the PDTC123JE,115 transistor?

    The PDTC123JE,115 is a pre-biased NPN transistor with integrated bias resistors, produced by NXP USA Inc.

  2. Why is the PDTC123JE,115 obsolete?

    The PDTC123JE,115 is no longer manufactured and has been replaced by other models or substitutes.

  3. What are the key specifications of the PDTC123JE,115?

    Key specifications include a maximum collector-emitter voltage of 50 V, maximum collector current of 100 mA, and integrated resistors R1 = 2.2 kΩ and R2 = 47 kΩ.

  4. What are the benefits of using the PDTC123JE,115?

    It simplifies circuit design, reduces component count, and is a cost-saving alternative for BC847 series in digital applications.

  5. In what package is the PDTC123JE,115 available?

    The transistor is available in the SC75 (SOT416) surface-mount package.

  6. What are some common applications of the PDTC123JE,115?

    Common applications include controlling IC inputs, switching loads, and general-purpose switching and amplification in electronic circuits.

  7. What is the maximum power rating of the PDTC123JE,115?

    The maximum power rating is 150 mW.

  8. What is the DC current gain (hFE) of the PDTC123JE,115?

    The DC current gain (hFE) is minimum 30 at 20 mA and 5 V.

  9. Is the PDTC123JE,115 suitable for high-frequency applications?

    The transistor is more suited for general-purpose and digital applications rather than high-frequency applications.

  10. Where can I find substitutes for the PDTC123JE,115?

    Substitutes can be found through official distributors and electronic component suppliers.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number PDTC123JE,115 PDTC123JU,115 PDTC123JK,115 PDTC123TE,115 PDTC123YE,115 PDTC123EE,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms - 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 100 @ 10mA, 10V 100 @ 10mA, 5V 30 @ 20mA, 5V 35 @ 5mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - -
Power - Max 150 mW 200 mW 250 mW 150 mW 150 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SOT-323 SMT3; MPAK SC-75 SC-75 SC-75

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