Overview
The PDTC114EK,135 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This component is designed for surface mount applications and features built-in bias resistors, simplifying circuit design and reducing component count. It is part of the PDTC114 series, known for its reliability and performance in various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Power - Max | 150 mW |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5 mA, 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 100 mV @ 250 µA, 5 mA |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Key Features
- Pre-biased NPN bipolar junction transistor with built-in bias resistors.
- Surface mount package (SC-75, SOT-416) for compact design.
- Maximum collector current of 100 mA and maximum collector-emitter voltage of 50 V.
- Low Vce saturation of 100 mV at specified conditions.
- DC current gain (hFE) of at least 100 at 5 mA and 5 V.
- Integrated base and emitter resistors (R1 = 10 kOhms, R2 = 47 kOhms) for simplified circuit design.
Applications
The PDTC114EK,135 is suitable for a variety of applications, including:
- Switching circuits: Due to its high current gain and low Vce saturation, it is ideal for switching applications.
- Amplifier circuits: The built-in bias resistors make it convenient for use in amplifier circuits.
- Automotive and industrial control systems: Its robust specifications and surface mount package make it suitable for use in demanding environments.
Q & A
- What is the maximum collector current of the PDTC114EK,135?
The maximum collector current is 100 mA. - What is the maximum collector-emitter voltage of the PDTC114EK,135?
The maximum collector-emitter voltage is 50 V. - What type of transistor is the PDTC114EK,135?
The PDTC114EK,135 is an NPN pre-biased bipolar junction transistor. - What is the package type of the PDTC114EK,135?
The package type is SC-75, SOT-416. - What are the values of the built-in resistors?
The base resistor (R1) is 10 kOhms, and the emitter base resistor (R2) is 47 kOhms. - What is the DC current gain (hFE) of the PDTC114EK,135?
The DC current gain (hFE) is at least 100 at 5 mA and 5 V. - What is the Vce saturation of the PDTC114EK,135?
The Vce saturation is 100 mV at 250 µA and 5 mA. - Is the PDTC114EK,135 suitable for surface mount applications?
Yes, it is designed for surface mount applications. - What are some common applications of the PDTC114EK,135?
It is commonly used in switching circuits, amplifier circuits, and automotive and industrial control systems. - What is the maximum power dissipation of the PDTC114EK,135?
The maximum power dissipation is 150 mW.
