PDTA123JTVL
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Nexperia USA Inc. PDTA123JTVL

Manufacturer No:
PDTA123JTVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 250MW TO236AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The PDTA123JTVL is a pre-biased PNP transistor manufactured by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor devices, known for their reliability and efficiency. The PDTA123JTVL is designed to simplify circuit design by integrating resistors within the transistor package, making it ideal for various electronic applications.

Key Specifications

Parameter Value
Manufacturer Part Number PDTA123JTVL
Category Discrete Semiconductor
Description TRANS PREBIAS PNP 250MW TO236AB
Transistor Type PNP - Pre-Biased
Package / Case TO-236AB (SOT23)
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Resistor - Emitter Base (R2) (Ohms) 47k
Resistor - Base (R1) (Ohms) 2.2k
Power - Max 250mW
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

Key Features

  • Pre-Biased Configuration: The PDTA123JTVL comes with integrated resistors, simplifying the design process and reducing the number of external components needed.
  • Compact Package: The TO-236AB (SOT23) package is small and suitable for surface mount applications, making it ideal for space-constrained designs.
  • Low Vce Saturation: With a maximum Vce saturation of 100mV at specified currents, this transistor offers low power losses.
  • High Current Gain: The transistor has a minimum DC current gain (hFE) of 100, ensuring reliable amplification.
  • Low Collector Cutoff Current: The maximum collector cutoff current is 100nA, which helps in reducing standby power consumption.

Applications

  • Automotive Electronics: Given its reliability and efficiency, the PDTA123JTVL can be used in various automotive applications, including sensor circuits and control systems.
  • Industrial Control Systems: It is suitable for use in industrial control circuits, such as motor control and power management systems.
  • Consumer Electronics: The transistor can be used in consumer electronic devices like audio amplifiers, power supplies, and other general-purpose amplification circuits.
  • Robotics and Automation: Its compact size and integrated resistors make it a good choice for robotic and automation projects where space and simplicity are crucial.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PDTA123JTVL?

    The maximum collector-emitter breakdown voltage is 50V.

  2. What is the package type of the PDTA123JTVL?

    The package type is TO-236AB (SOT23).

  3. What are the integrated resistors in the PDTA123JTVL?

    The transistor includes a 2.2kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2).

  4. What is the maximum power dissipation of the PDTA123JTVL?

    The maximum power dissipation is 250mW.

  5. What is the minimum DC current gain (hFE) of the PDTA123JTVL?

    The minimum DC current gain (hFE) is 100 at 10mA and 5V.

  6. What is the maximum collector current of the PDTA123JTVL?

    The maximum collector current is 100mA.

  7. Is the PDTA123JTVL suitable for surface mount applications?
  8. What are some common applications of the PDTA123JTVL?

    The PDTA123JTVL is commonly used in automotive electronics, industrial control systems, consumer electronics, and robotics and automation projects.

  9. Where can I find the datasheet for the PDTA123JTVL?

    The datasheet can be found on the Nexperia website or through authorized distributors like Ariat-Tech.

  10. What is the collector cutoff current of the PDTA123JTVL?

    The maximum collector cutoff current is 100nA (ICBO).

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTA123JTVL PDTA123ETVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA
Frequency - Transition - -
Power - Max 250 mW -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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