PDTC114YE,135
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NXP USA Inc. PDTC114YE,135

Manufacturer No:
PDTC114YE,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC75
Delivery:
Payment:
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Product Introduction

Overview

The PDTC114YE,135 is a pre-biased bipolar transistor (BJT) manufactured by NXP USA Inc. This component is part of the PDTA114Y series and is designed for various electronic applications requiring stable and reliable transistor performance. The PDTC114YE,135 is particularly suited for use in surface mount technology (SMT) due to its compact package.

Key Specifications

ParameterValue
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Resistor - Emitter Base (R2) (Ohms)47k
Resistor - Base (R1) (Ohms)10k
Power - Max150mW
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Current - Collector Cutoff (Max)1µA
Current - Collector (Ic) (Max)100mA

Key Features

  • Pre-biased configuration for simplified circuit design and reduced component count.
  • Compact SC-75 and SOT-416 packages suitable for surface mount applications.
  • High collector-emitter breakdown voltage of 50V.
  • Low Vce saturation of 100mV at specified current levels.
  • Built-in resistors (R1 and R2) for base and emitter configurations.
  • Low power consumption with a maximum power rating of 150mW.

Applications

The PDTC114YE,135 is versatile and can be used in a variety of electronic circuits, including:

  • Audio amplifiers and switching circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as TVs, radios, and other audio equipment.
  • General-purpose amplification and switching applications.

Q & A

  1. What is the transistor type of the PDTC114YE,135? The PDTC114YE,135 is an NPN pre-biased bipolar transistor.
  2. What is the maximum collector-emitter breakdown voltage? The maximum collector-emitter breakdown voltage is 50V.
  3. What is the Vce saturation at specified current levels? The Vce saturation is 100mV @ 250µA, 5mA.
  4. What are the built-in resistor values? The built-in resistors are R1 = 10kΩ and R2 = 47kΩ.
  5. What is the maximum power rating? The maximum power rating is 150mW.
  6. What is the package type of the PDTC114YE,135? The package types are SC-75 and SOT-416.
  7. What is the mounting type? The mounting type is surface mount.
  8. What is the DC current gain (hFE) at specified conditions? The DC current gain (hFE) is 100 @ 5mA, 5V.
  9. What is the maximum collector current? The maximum collector current is 100mA.
  10. Is the PDTC114YE,135 still in production? The PDTC114YE,135 is listed as obsolete and no longer manufactured by NXP USA Inc.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number PDTC114YE,135 PDTC114YE,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - -
Power - Max 150 mW 150 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SC-75

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