MMUN2114LT1G
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onsemi MMUN2114LT1G

Manufacturer No:
MMUN2114LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2114LT1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This component simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. It is part of the MUN2114 series, which includes various packages such as SOT-23, SC-59, and others.

Key Specifications

CharacteristicSymbolMaxUnit
Total Device Dissipation (TA = 25°C)PD230mW
Thermal Resistance, Junction to AmbientRθJA540°C/W
Thermal Resistance, Junction to LeadRθJL264°C/W
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C
Input Voltage (off)Vi(off)0.7Vdc
Input Voltage (on)Vi(on)1.4Vdc
Output Voltage (on)VOL0.2Vdc
Output Voltage (off)VOH4.9Vdc
Input ResistorR17.0 to 13
Resistor RatioR1/R20.17 to 0.25

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free package options available.

Applications

The MMUN2114LT1G is suitable for a variety of applications, including automotive systems, industrial control circuits, and general-purpose switching circuits where space and component count need to be minimized. It is also useful in designs requiring low power consumption and high reliability.

Q & A

  1. What is the MMUN2114LT1G? The MMUN2114LT1G is a digital transistor with an integrated monolithic bias resistor network, produced by onsemi.
  2. What are the key benefits of using the MMUN2114LT1G? It simplifies circuit design, reduces board space, and minimizes component count.
  3. What package type does the MMUN2114LT1G come in? The MMUN2114LT1G comes in the SOT-23 package.
  4. What is the maximum total device dissipation at 25°C? The maximum total device dissipation at 25°C is 230 mW.
  5. What is the thermal resistance from junction to ambient for the SOT-23 package? The thermal resistance from junction to ambient is 540 °C/W.
  6. What is the junction and storage temperature range? The junction and storage temperature range is −55 to +150 °C.
  7. Is the MMUN2114LT1G AEC-Q101 qualified? Yes, the MMUN2114LT1G is AEC-Q101 qualified and PPAP capable.
  8. What are some typical applications for the MMUN2114LT1G? Typical applications include automotive systems, industrial control circuits, and general-purpose switching circuits.
  9. What is the input voltage range for the MMUN2114LT1G? The input voltage range is from 0.7 V (off) to 1.4 V (on).
  10. Is the MMUN2114LT1G Pb-free? Yes, the MMUN2114LT1G is available in Pb-free packages.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.15
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Similar Products

Part Number MMUN2114LT1G MMUN2134LT1G MMUN2115LT1G MMUN2214LT1G MMUN2116LT1G MMUN2114LT3G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased + Diode PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 22 kOhms 10 kOhms 10 kOhms 4.7 kOhms 10 kOhms 10 kOhms 22 kOhms 47 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - 47 kOhms - 47 kOhms 10 kOhms 22 kOhms 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 246 mW 246 mW 400 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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