Overview
The PDTA114ET,215 is a 50 V, 100 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce component count, making it an efficient choice for various electronic applications. The transistor is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.
Key Specifications
Parameter | Value |
---|---|
Type Number | PDTA114ET |
Package | SOT23 (TO-236AB) |
Output Current (I_C [max]) | 100 mA |
Built-in Resistors (R1, R2) | 10 kΩ each |
Collector-Emitter Voltage (V_CE0) | 50 V |
Junction Temperature (T_j [max]) | 150 °C |
Total Power Dissipation (P_tot) | 250 mW |
Channel Type | PNP |
Key Features
- 100 mA output current capability
- Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
- Simplifies circuit design by reducing the need for external resistors
- Reduces component count and pick-and-place costs
- Cost-saving alternative for BC847 series in digital applications
- Suitable for controlling IC inputs and switching loads
Applications
The PDTA114ET,215 is widely used in various industries, including:
- Automotive: Digital applications such as sensor interfaces and control circuits.
- Industrial: Control circuits, sensor interfaces, and general-purpose switching applications.
- Consumer Electronics: For controlling IC inputs and switching loads in consumer devices.
Q & A
- What is the maximum output current of the PDTA114ET,215 transistor?
The maximum output current is 100 mA.
- What type of package does the PDTA114ET,215 come in?
The transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What are the values of the built-in resistors in the PDTA114ET,215?
The built-in resistors are 10 kΩ each (R1 and R2).
- What is the maximum collector-emitter voltage (V_CE0) of the PDTA114ET,215?
The maximum collector-emitter voltage is 50 V.
- What is the maximum junction temperature (T_j [max]) of the PDTA114ET,215?
The maximum junction temperature is 150 °C.
- What are the primary applications of the PDTA114ET,215 transistor?
The primary applications include automotive, industrial, and consumer electronics for controlling IC inputs and switching loads.
- How does the PDTA114ET,215 simplify circuit design?
It simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.
- Is the PDTA114ET,215 a cost-saving alternative for any other transistor series?
Yes, it is a cost-saving alternative for the BC847 series in digital applications.
- What is the total power dissipation (P_tot) of the PDTA114ET,215?
The total power dissipation is 250 mW.
- Where can I find more detailed specifications and datasheets for the PDTA114ET,215?
You can find detailed specifications and datasheets on Nexperia's official website or through authorized distributors like Mouser, Digi-Key, and Avnet.