PDTA114ET,215
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Nexperia USA Inc. PDTA114ET,215

Manufacturer No:
PDTA114ET,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA114ET,215 is a 50 V, 100 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce component count, making it an efficient choice for various electronic applications. The transistor is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.

Key Specifications

Parameter Value
Type Number PDTA114ET
Package SOT23 (TO-236AB)
Output Current (I_C [max]) 100 mA
Built-in Resistors (R1, R2) 10 kΩ each
Collector-Emitter Voltage (V_CE0) 50 V
Junction Temperature (T_j [max]) 150 °C
Total Power Dissipation (P_tot) 250 mW
Channel Type PNP

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick-and-place costs
  • Cost-saving alternative for BC847 series in digital applications
  • Suitable for controlling IC inputs and switching loads

Applications

The PDTA114ET,215 is widely used in various industries, including:

  • Automotive: Digital applications such as sensor interfaces and control circuits.
  • Industrial: Control circuits, sensor interfaces, and general-purpose switching applications.
  • Consumer Electronics: For controlling IC inputs and switching loads in consumer devices.

Q & A

  1. What is the maximum output current of the PDTA114ET,215 transistor?

    The maximum output current is 100 mA.

  2. What type of package does the PDTA114ET,215 come in?

    The transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What are the values of the built-in resistors in the PDTA114ET,215?

    The built-in resistors are 10 kΩ each (R1 and R2).

  4. What is the maximum collector-emitter voltage (V_CE0) of the PDTA114ET,215?

    The maximum collector-emitter voltage is 50 V.

  5. What is the maximum junction temperature (T_j [max]) of the PDTA114ET,215?

    The maximum junction temperature is 150 °C.

  6. What are the primary applications of the PDTA114ET,215 transistor?

    The primary applications include automotive, industrial, and consumer electronics for controlling IC inputs and switching loads.

  7. How does the PDTA114ET,215 simplify circuit design?

    It simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.

  8. Is the PDTA114ET,215 a cost-saving alternative for any other transistor series?

    Yes, it is a cost-saving alternative for the BC847 series in digital applications.

  9. What is the total power dissipation (P_tot) of the PDTA114ET,215?

    The total power dissipation is 250 mW.

  10. Where can I find more detailed specifications and datasheets for the PDTA114ET,215?

    You can find detailed specifications and datasheets on Nexperia's official website or through authorized distributors like Mouser, Digi-Key, and Avnet.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTA114ET,215 PDTA114ET,235 PDTA124ET,215 PDTA114YT,215 PDTA115ET,215 PDTA114TT,215 PDTA113ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 20 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 22 kOhms 10 kOhms 100 kOhms 10 kOhms 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 22 kOhms 47 kOhms 100 kOhms - 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V 60 @ 5mA, 5V 100 @ 5mA, 5V 80 @ 5mA, 5V 200 @ 1mA, 5V 30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 1µA
Frequency - Transition - - - - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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