PDTC143ET,235
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NXP Semiconductors PDTC143ET,235

Manufacturer No:
PDTC143ET,235
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
PDTC143E - NPN RESISTOR-EQUIPPED
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC143ET,235 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) produced by Nexperia, not NXP Semiconductors. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This transistor is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications.

Key Specifications

Parameter Min Typ Max Unit
VCEO (Collector-Emitter Voltage) - - 50 V
IO (Output Current) - - 100 mA
R1 (Bias Resistor 1) 3.3 4.7 6.1 kΩ
R2 (Bias Resistor 2) 3.3 4.7 6.1 kΩ
Ptot (Total Power Dissipation) - - 250 mW
Tj (Junction Temperature) - - 150 °C
Tamb (Ambient Temperature) -65 - 150 °C

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 4.7 kΩ, R2 = 4.7 kΩ)
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • PNP complement: PDTA143ET

Applications

  • Digital applications in industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads

Q & A

  1. What is the maximum collector-emitter voltage of the PDTC143ET,235?

    The maximum collector-emitter voltage (VCEO) is 50 V.

  2. What is the output current capability of this transistor?

    The output current capability is 100 mA.

  3. What are the values of the built-in bias resistors?

    The built-in bias resistors are R1 = 4.7 kΩ and R2 = 4.7 kΩ.

  4. What package type is used for the PDTC143ET,235?

    The transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. What are the primary applications of this transistor?

    Primary applications include digital applications in industrial segments, controlling IC inputs, and switching loads.

  6. Is the PDTC143ET,235 RoHS compliant?
  7. What is the junction temperature limit for this transistor?

    The junction temperature limit is 150 °C.

  8. Can the PDTC143ET,235 be used as a replacement for the BC847 series?
  9. What is the PNP complement of the PDTC143ET,235?

    The PNP complement is the PDTA143ET.

  10. How does the PDTC143ET,235 simplify circuit design?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number PDTC143ET,235 PDTC143ZT,235 PDTC143TT,235 PDTC143ET,215
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms - 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V 100 @ 10mA, 5V 200 @ 1mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
Frequency - Transition - 230 MHz - -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 TO-236AB TO-236AB TO-236AB

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