PBHV9115TLH215
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NXP Semiconductors PBHV9115TLH215

Manufacturer No:
PBHV9115TLH215
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PBHV9115T - SMALL SIGNA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV9115TLH215 is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This transistor is part of the breakthrough-in small signal (BISS) family and is housed in a surface-mount plastic package, specifically the SOT-23-3 (TO-236) package. It is designed for low-power applications and offers several key benefits, including low collector-emitter saturation voltage and high current gain. This makes it suitable for a variety of electronic circuits requiring reliable and efficient signal amplification or switching.

Key Specifications

Specification Value
Manufacturer NXP Semiconductors
Transistor Type PNP
Package / Case SOT-23-3, TO-236-3, SC-59
Mounting Type Surface Mount
Power - Max 300 mW
Operating Temperature 150°C (TJ)
Frequency - Transition 55 MHz
Current - Collector (Ic) (Max) 1 A
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50 mA, 10 V
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 120 mV @ 10 mA, 100 mA

Key Features

  • Low Collector-Emitter Saturation Voltage: The PBHV9115TLH215 features a low Vce saturation voltage, which is beneficial for reducing power consumption and improving efficiency in low-power applications.
  • High Current Gain: With a minimum DC current gain (hFE) of 70 at 50 mA and 10 V, this transistor provides reliable amplification of signals.
  • High Transition Frequency: The transistor has a transition frequency of 55 MHz, making it suitable for high-frequency applications.
  • Compact Package: The SOT-23-3 package is compact and suitable for surface-mount technology, allowing for dense circuit designs.
  • High Operating Temperature: The transistor can operate up to 150°C (TJ), making it robust for various environmental conditions.

Applications

  • Audio Amplifiers: The PBHV9115TLH215 can be used in audio amplifiers due to its low noise and high current gain.
  • Switching Circuits: Its low Vce saturation voltage and high transition frequency make it suitable for switching applications.
  • General Purpose Amplification: It is versatile and can be used in various general-purpose amplification circuits.
  • Automotive Electronics: The high operating temperature and robustness of the transistor make it a good choice for automotive electronics.

Q & A

  1. What is the maximum collector current of the PBHV9115TLH215?

    The maximum collector current is 1 A.

  2. What is the package type of the PBHV9115TLH215?

    The package type is SOT-23-3 (TO-236-3), SC-59.

  3. What is the maximum operating temperature of the PBHV9115TLH215?

    The maximum operating temperature is 150°C (TJ).

  4. What is the transition frequency of the PBHV9115TLH215?

    The transition frequency is 55 MHz.

  5. What is the minimum DC current gain (hFE) of the PBHV9115TLH215?

    The minimum DC current gain (hFE) is 70 at 50 mA and 10 V.

  6. What is the maximum collector-emitter breakdown voltage of the PBHV9115TLH215?

    The maximum collector-emitter breakdown voltage is 150 V.

  7. What is the typical Vce saturation voltage of the PBHV9115TLH215?

    The typical Vce saturation voltage is 120 mV at 10 mA and 100 mA.

  8. Is the PBHV9115TLH215 suitable for high-frequency applications?

    Yes, it is suitable due to its high transition frequency.

  9. What are some common applications of the PBHV9115TLH215?

    Common applications include audio amplifiers, switching circuits, general-purpose amplification, and automotive electronics.

  10. What is the power dissipation of the PBHV9115TLH215?

    The maximum power dissipation is 300 mW.

  11. Is the PBHV9115TLH215 available in surface-mount packages?

    Yes, it is available in surface-mount packages such as SOT-23-3 and SC-59.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PBHV9115TLH215 PBHV8115TLH215
Manufacturer NXP Semiconductors NXP Semiconductors
Product Status Active Active
FET Type - -
Technology - -
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type - -
Supplier Device Package - -
Package / Case - -

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