PDTA114YT,215
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Nexperia USA Inc. PDTA114YT,215

Manufacturer No:
PDTA114YT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA114YT,215 is a Pre-Biased Bipolar Transistor (BJT) manufactured by Nexperia USA Inc. This PNP transistor is designed for surface mount applications and is packaged in the TO-236AB (SC-59) case. It is suitable for a variety of electronic circuits requiring a pre-biased transistor configuration, which simplifies the design and reduces the number of external components needed.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCEO) Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Max Power Dissipation250 mW
PolarityPNP
PackageTO-236AB (SC-59)
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Pre-biased configuration with built-in bias resistors, simplifying circuit design and reducing the need for external components.
  • PNP transistor with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA.
  • Compact TO-236AB (SC-59) surface mount package, ideal for space-saving designs.
  • Maximum power dissipation of 250 mW, suitable for various low to medium power applications.
  • Compliant with REACH SVHC regulations, ensuring safe and environmentally responsible use.

Applications

The PDTA114YT,215 is versatile and can be used in a range of applications, including:

  • General-purpose amplification and switching circuits.
  • Automotive electronics, such as in-car audio systems and other low-power control circuits.
  • Industrial control systems, including motor control and sensor interfaces.
  • Consumer electronics, such as home appliances and audio equipment.

Q & A

  1. What is the maximum collector-emitter voltage of the PDTA114YT,215?
    The maximum collector-emitter voltage (VCEO) is 50 V.
  2. What is the continuous collector current of this transistor?
    The continuous collector current is 100 mA.
  3. What is the package type of the PDTA114YT,215?
    The package type is TO-236AB (SC-59).
  4. What is the maximum power dissipation of this transistor?
    The maximum power dissipation is 250 mW.
  5. Is the PDTA114YT,215 compliant with REACH SVHC regulations?
    Yes, it is compliant with REACH SVHC regulations.
  6. What are the built-in bias resistors for in this transistor?
    The built-in bias resistors simplify the circuit design by providing the necessary DC bias conditions for the transistor.
  7. Can this transistor be used in automotive applications?
    Yes, it can be used in automotive electronics due to its suitable specifications and compliance with relevant standards.
  8. What is the moisture sensitivity level (MSL) of the PDTA114YT,215?
    The MSL is 1 (Unlimited).
  9. What are some common applications of the PDTA114YT,215?
    It is used in general-purpose amplification, automotive electronics, industrial control systems, and consumer electronics.
  10. Is the PDTA114YT,215 suitable for high-power applications?
    No, it is more suited for low to medium power applications due to its power dissipation limit of 250 mW.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTA114YT,215 PDTA114ET,215 PDTA114TT,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA 100nA (ICBO)
Frequency - Transition - - -
Power - Max 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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