DTA123JET1G
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onsemi DTA123JET1G

Manufacturer No:
DTA123JET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The DTA123JET1G is a PNP bipolar pre-biased digital transistor manufactured by onsemi. This component is designed to replace a single device and its external resistor bias network, simplifying circuit design and reducing the number of components required. It is particularly useful in applications where space and component count need to be minimized.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Pre-Biased Digital Transistor
Maximum Collector-Emitter Voltage (Vce)50 V
Maximum Collector Current (Ic)100 mA
Base Resistor2.2 kΩ
Emitter Resistor47 kΩ
Power Dissipation (Pd)200 mW
Package TypeSurface Mount SC-75, SOT-416

Key Features

  • Monolithic bias network design, eliminating the need for external resistors.
  • PNP bipolar transistor configuration.
  • High collector-emitter voltage rating of 50 V.
  • Maximum collector current of 100 mA.
  • Low power dissipation of 200 mW.
  • Compact surface mount SC-75, SOT-416 package.

Applications

The DTA123JET1G is suitable for a variety of applications, including but not limited to:

  • Switching circuits in consumer electronics.
  • Automotive systems requiring compact and reliable transistor solutions.
  • Industrial control systems where space is limited.
  • General-purpose digital circuits where a pre-biased transistor is beneficial.

Q & A

  1. What is the DTA123JET1G transistor type?
    The DTA123JET1G is a PNP bipolar pre-biased digital transistor.
  2. What is the maximum collector-emitter voltage of the DTA123JET1G?
    The maximum collector-emitter voltage is 50 V.
  3. What is the maximum collector current of the DTA123JET1G?
    The maximum collector current is 100 mA.
  4. What are the values of the base and emitter resistors in the DTA123JET1G?
    The base resistor is 2.2 kΩ, and the emitter resistor is 47 kΩ.
  5. What is the power dissipation of the DTA123JET1G?
    The power dissipation is 200 mW.
  6. What package type does the DTA123JET1G come in?
    The DTA123JET1G comes in a surface mount SC-75, SOT-416 package.
  7. Why is the DTA123JET1G useful in circuit design?
    The DTA123JET1G is useful because it integrates the bias network, reducing the need for external resistors and simplifying circuit design.
  8. What are some common applications of the DTA123JET1G?
    Common applications include switching circuits in consumer electronics, automotive systems, industrial control systems, and general-purpose digital circuits.
  9. Where can I find detailed specifications for the DTA123JET1G?
    Detailed specifications can be found in the technical datasheet available from the manufacturer's website or through distributors like Mouser, Digi-Key, and Farnell.
  10. Is the DTA123JET1G suitable for high-power applications?
    No, the DTA123JET1G is not suitable for high-power applications due to its limited power dissipation of 200 mW.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTA123JET1G DTA123TET1G DTA123EET1G DTA123JET1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms - 2.2 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 160 @ 5mA, 10V 8 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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