Overview
The MUN5212T1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. The MUN5212T1G is part of a series of Bias Resistor Transistors (BRT) that include other models like MUN2212 and DTC124EE.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 60 | 100 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | Vdc |
| Input Voltage (on) | Vi(on) | 2.5 | 1.6 | - | Vdc |
| Input Resistor | R1 | 15.4 | 22 | 28.6 | kΩ |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Total Device Dissipation (TA = 25°C) | PD | 202 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 618 | - | - | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | - | - | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact package options such as SC-70/SOT-323 reduce the overall footprint of the circuit.
- Reduces Component Count: By integrating the bias resistors into the transistor, it minimizes the number of components required in the circuit.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Meets environmental and safety standards.
Applications
- Automotive Systems: AEC-Q101 qualified, making it suitable for various automotive applications.
- Industrial Control Systems: Used in control circuits where compact and reliable transistor performance is required.
- Consumer Electronics: Ideal for applications in consumer electronics where space and component count are critical.
- General Purpose Switching: Can be used in a variety of switching applications due to its robust electrical characteristics.
Q & A
- What is the MUN5212T1G?
The MUN5212T1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.
- What are the key benefits of using the MUN5212T1G?
It simplifies circuit design, reduces board space, and minimizes component count. It is also AEC-Q101 qualified and RoHS compliant.
- What are the typical applications of the MUN5212T1G?
It is used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching applications.
- What is the maximum collector-emitter breakdown voltage of the MUN5212T1G?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the thermal resistance, junction to ambient, for the SC-70/SOT-323 package?
The thermal resistance, junction to ambient, is 618 °C/W.
- What is the junction and storage temperature range for the MUN5212T1G?
The junction and storage temperature range is -55 to +150 °C.
- Is the MUN5212T1G Pb-Free and RoHS compliant?
Yes, the MUN5212T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the typical DC current gain of the MUN5212T1G?
The typical DC current gain is 100.
- What is the collector-emitter saturation voltage of the MUN5212T1G?
The collector-emitter saturation voltage is 0.25 Vdc.
- What package options are available for the MUN5212T1G?
The MUN5212T1G is available in the SC-70/SOT-323 package.
