Overview
The PDTC114EE,115 is a pre-biased NPN bipolar transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for general-purpose switching and amplification applications. It features built-in bias resistors, which simplify circuit design and reduce the component count, thereby lowering pick and place costs. The PDTC114EE,115 is housed in a surface-mount SC-75 (SOT-416) package, making it suitable for automated placement in various electronic devices.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 10 | kΩ |
| Resistor - Emitter Base (R2) | 10 | kΩ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
| Current - Collector Cutoff (Max) | 1µA | |
| Frequency - Transition | 230 | MHz |
| Power - Max | 150 | mW |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 |
Key Features
- Built-in bias resistors, which simplify circuit design and reduce the component count.
- Reduction of pick and place costs due to the integrated resistors.
- High current sink capability.
- Low collector-emitter saturation voltage.
- High DC current gain (hFE).
- Suitable for general-purpose amplifier and low-speed switching applications.
Applications
The PDTC114EE,115 is commonly used in various applications, including:
- Automotive applications for protection against transient voltage spikes.
- Industrial applications requiring reliable switching and amplification.
- Consumer electronics for ESD protection, overvoltage protection, and voltage clamping.
- General-purpose switching and amplification circuits.
- Inverter and interface circuits.
- Circuit driver applications.
Q & A
- What is the PDTC114EE,115 transistor?
The PDTC114EE,115 is a pre-biased NPN bipolar transistor designed for general-purpose switching and amplification applications.
- Who is the manufacturer of the PDTC114EE,115?
The PDTC114EE,115 is manufactured by NXP USA Inc.
- What is the maximum collector current of the PDTC114EE,115?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter voltage of the PDTC114EE,115?
The maximum collector-emitter voltage is 50 V.
- What are the values of the built-in bias resistors?
The built-in bias resistors are 10 kΩ each (R1 and R2).
- What is the DC current gain (hFE) of the PDTC114EE,115?
The DC current gain (hFE) is a minimum of 30 at 5 mA and 5 V.
- What is the collector-emitter saturation voltage of the PDTC114EE,115?
The collector-emitter saturation voltage is a maximum of 150 mV at 500 µA and 10 mA.
- What is the transition frequency of the PDTC114EE,115?
The transition frequency is 230 MHz.
- What is the maximum power dissipation of the PDTC114EE,115?
The maximum power dissipation is 150 mW.
- In what package is the PDTC114EE,115 available?
The PDTC114EE,115 is available in a surface-mount SC-75 (SOT-416) package.
