PDTC114TEF,115
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NXP USA Inc. PDTC114TEF,115

Manufacturer No:
PDTC114TEF,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC89
Delivery:
Payment:
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Product Introduction

Overview

The PDTC114TU,115 is a pre-biased NPN bipolar transistor from Nexperia, designed to offer a compact and efficient solution for various electronic circuits. This transistor is part of the PDTC114T series, which features integrated resistors to simplify circuit design and reduce component count. The PDTC114TU,115 is packaged in the SC-70 (SOT-323) package, making it suitable for surface mount applications.

Key Specifications

Product Attribute Attribute Value
Manufacturer Nexperia
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-323
Resistor - Base (R1) 10 kOhms
Power - Max 200 mW
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Key Features

  • Pre-biased Configuration: The transistor comes with an integrated base resistor (R1 = 10 kOhms), simplifying circuit design and reducing the number of external components needed.
  • Compact Packaging: The SC-70 (SOT-323) package is ideal for surface mount applications, offering a small footprint and high reliability.
  • High Reliability: The transistor is ROHS3 compliant and has a moisture sensitivity level (MSL) of 1, indicating unlimited shelf life.
  • Low Power Consumption: With a maximum power rating of 200 mW, this transistor is suitable for low-power applications.
  • High Voltage Capability: The transistor can handle a maximum collector-emitter breakdown voltage of 50 V, making it suitable for various high-voltage circuits.

Applications

The PDTC114TU,115 is versatile and can be used in a variety of applications, including:

  • Automotive Electronics: Suitable for use in 48V automotive board nets and other high-voltage circuits subject to large spikes and pulses.
  • Consumer Electronics: Ideal for use in audio amplifiers, switching circuits, and other general-purpose electronic devices.
  • Industrial Control Systems: Can be used in control circuits, sensor interfaces, and other industrial automation applications.
  • Medical Devices: Suitable for use in medical equipment where compact, reliable, and low-power components are required.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PDTC114TU,115?

    The maximum collector-emitter breakdown voltage is 50 V.

  2. What type of transistor is the PDTC114TU,115?

    The PDTC114TU,115 is an NPN pre-biased bipolar transistor.

  3. What is the package type of the PDTC114TU,115?

    The transistor is packaged in the SC-70 (SOT-323) package.

  4. What is the maximum power rating of the PDTC114TU,115?

    The maximum power rating is 200 mW.

  5. Is the PDTC114TU,115 ROHS compliant?
  6. What is the moisture sensitivity level (MSL) of the PDTC114TU,115?

    The MSL is 1, indicating unlimited shelf life.

  7. What is the DC current gain (hFE) of the PDTC114TU,115?

    The minimum DC current gain (hFE) is 200 at 1mA and 5V.

  8. What is the maximum collector current of the PDTC114TU,115?

    The maximum collector current is 100 mA.

  9. Is the PDTC114TU,115 suitable for high-voltage applications?
  10. What are some common applications of the PDTC114TU,115?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-89, SOT-490
Supplier Device Package:SC-89
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Similar Products

Part Number PDTC114TEF,115 PDTC114YEF,115 PDTC114TE,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 100 @ 5mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 100nA (ICBO)
Frequency - Transition - - -
Power - Max 150 mW 250 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-75, SOT-416
Supplier Device Package SC-89 SC-89 SC-75

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