Overview
The NSVDTA114EET1G is a digital transistor from onsemi, part of their Bias Resistor Transistor (BRT) series. This component is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count in electronic systems.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | Vdc |
| Input Voltage (on) | Vi(on) | 2.5 | 1.8 | - | Vdc |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc |
| Input Resistor R1 | R1 | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Total Device Dissipation at TA = 25°C | PD | - | - | 200 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 600 | °C/W |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact package options such as SC-75, SC-70/SOT-323, and SOT-723 reduce the overall footprint of the circuit.
- Reduces Component Count: By integrating the bias resistors into the transistor, fewer components are needed, simplifying the Bill of Materials (BOM).
- Pb-Free Packages: Available in lead-free packages, making it suitable for applications requiring environmental compliance.
- Automotive and Industrial Applications: Suitable for use in automotive and other applications requiring robust performance and reliability.
Applications
- Automotive Systems: Ideal for use in various automotive applications due to its robust performance and Pb-free packaging.
- Industrial Control Systems: Used in industrial control circuits where reliability and compact design are crucial.
- Consumer Electronics: Suitable for use in consumer electronics where space and component count are critical factors.
- Power Management Circuits: Can be used in power management circuits to control and regulate power efficiently.
Q & A
- What is the NSVDTA114EET1G?
The NSVDTA114EET1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce component count.
- What are the key benefits of using the NSVDTA114EET1G?
It simplifies circuit design, reduces board space, and decreases the overall component count.
- What are the typical package options for the NSVDTA114EET1G?
Available in SC-75, SC-70/SOT-323, and SOT-723 packages.
- What is the maximum collector-emitter breakdown voltage for the NSVDTA114EET1G?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the typical DC current gain for the NSVDTA114EET1G?
The typical DC current gain is 60.
- What is the maximum collector-emitter saturation voltage for the NSVDTA114EET1G?
The maximum collector-emitter saturation voltage is 0.25 Vdc.
- What is the input voltage range for the NSVDTA114EET1G when it is in the 'on' state?
The input voltage range when 'on' is typically 1.8 Vdc.
- What is the thermal resistance, junction to ambient, for the NSVDTA114EET1G in an SC-75 package?
The thermal resistance, junction to ambient, is 600 °C/W.
- What is the junction and storage temperature range for the NSVDTA114EET1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the NSVDTA114EET1G suitable for automotive applications?
Yes, it is suitable for automotive and other applications requiring robust performance and Pb-free packaging.
