Overview
The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, manufactured by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to integrate a single transistor and its external resistor bias network into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MMUN2213LT1G is available in a SOT-23 package and is lead-free, making it suitable for various applications, including automotive and other sectors requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
Emitter-Base Cutoff Current | IEBO | - | - | 0.1 | mA |
Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
DC Current Gain | hFE | 80 | 140 | - | - |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | V |
Input Voltage (on) | Vi(on) | 3.0 | 1.6 | - | V |
Input Resistor R1 | R1 | 32.9 | 47 | 61.1 | kΩ |
Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1.0 | 1.2 | - |
Total Device Dissipation (TA = 25°C) | PD | 246 | - | 400 | mW |
Thermal Resistance, Junction to Ambient | RθJA | 508 | - | 311 | °C/W |
Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor and its external resistor bias network into one device.
- Reduces Board Space: Compact SOT-23 package minimizes the footprint on the PCB.
- Reduces Component Count: Eliminates the need for external resistors, reducing the overall component count.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific control change requirements.
- Lead-Free Packaging: Compliant with lead-free regulations, making it environmentally friendly.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Consumer Electronics: Suitable for various consumer electronic devices where space and component count are critical.
- Industrial Control Systems: Can be used in industrial control systems where reliability and compact design are essential.
- General Purpose Switching: Applicable in general-purpose switching applications requiring a compact and reliable transistor solution.
Q & A
- What is the MMUN2213LT1G?
The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, designed to integrate a single transistor and its external resistor bias network into one device.
- What package type does the MMUN2213LT1G come in?
The MMUN2213LT1G is available in a SOT-23 package.
- Is the MMUN2213LT1G lead-free?
Yes, the MMUN2213LT1G is lead-free, making it compliant with environmental regulations.
- What are the key benefits of using the MMUN2213LT1G?
The key benefits include simplifying circuit design, reducing board space, and decreasing the overall component count.
- Is the MMUN2213LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What is the maximum collector-emitter breakdown voltage of the MMUN2213LT1G?
The maximum collector-emitter breakdown voltage is 50 V.
- What is the typical DC current gain of the MMUN2213LT1G?
The typical DC current gain (hFE) is 140.
- What is the maximum collector-emitter saturation voltage of the MMUN2213LT1G?
The maximum collector-emitter saturation voltage is 0.25 V.
- What is the thermal resistance, junction to ambient, for the MMUN2213LT1G?
The thermal resistance, junction to ambient (RθJA), is 508 °C/W.
- What is the junction and storage temperature range for the MMUN2213LT1G?
The junction and storage temperature range is -55°C to 150°C.