MMUN2213LT1G
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onsemi MMUN2213LT1G

Manufacturer No:
MMUN2213LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, manufactured by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to integrate a single transistor and its external resistor bias network into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MMUN2213LT1G is available in a SOT-23 package and is lead-free, making it suitable for various applications, including automotive and other sectors requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.1 mA
Collector-Base Breakdown Voltage V(BR)CBO 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V
DC Current Gain hFE 80 140 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Input Voltage (off) Vi(off) - 1.2 0.8 V
Input Voltage (on) Vi(on) 3.0 1.6 - V
Input Resistor R1 R1 32.9 47 61.1
Resistor Ratio R1/R2 R1/R2 0.8 1.0 1.2 -
Total Device Dissipation (TA = 25°C) PD 246 - 400 mW
Thermal Resistance, Junction to Ambient RθJA 508 - 311 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor and its external resistor bias network into one device.
  • Reduces Board Space: Compact SOT-23 package minimizes the footprint on the PCB.
  • Reduces Component Count: Eliminates the need for external resistors, reducing the overall component count.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific control change requirements.
  • Lead-Free Packaging: Compliant with lead-free regulations, making it environmentally friendly.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Suitable for various consumer electronic devices where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control systems where reliability and compact design are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications requiring a compact and reliable transistor solution.

Q & A

  1. What is the MMUN2213LT1G?

    The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, designed to integrate a single transistor and its external resistor bias network into one device.

  2. What package type does the MMUN2213LT1G come in?

    The MMUN2213LT1G is available in a SOT-23 package.

  3. Is the MMUN2213LT1G lead-free?

    Yes, the MMUN2213LT1G is lead-free, making it compliant with environmental regulations.

  4. What are the key benefits of using the MMUN2213LT1G?

    The key benefits include simplifying circuit design, reducing board space, and decreasing the overall component count.

  5. Is the MMUN2213LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  6. What is the maximum collector-emitter breakdown voltage of the MMUN2213LT1G?

    The maximum collector-emitter breakdown voltage is 50 V.

  7. What is the typical DC current gain of the MMUN2213LT1G?

    The typical DC current gain (hFE) is 140.

  8. What is the maximum collector-emitter saturation voltage of the MMUN2213LT1G?

    The maximum collector-emitter saturation voltage is 0.25 V.

  9. What is the thermal resistance, junction to ambient, for the MMUN2213LT1G?

    The thermal resistance, junction to ambient (RθJA), is 508 °C/W.

  10. What is the junction and storage temperature range for the MMUN2213LT1G?

    The junction and storage temperature range is -55°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMUN2213LT1G MMUN2217LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2233LT1G MMUN2113LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 47 kOhms 4.7 kOhms 10 kOhms 10 kOhms 4.7 kOhms 4.7 kOhms 47 kOhms 10 kOhms 22 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms 47 kOhms - - 47 kOhms 47 kOhms 10 kOhms 22 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 400 mW 400 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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