MMUN2213LT1G
  • Share:

onsemi MMUN2213LT1G

Manufacturer No:
MMUN2213LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, manufactured by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to integrate a single transistor and its external resistor bias network into a single package. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MMUN2213LT1G is available in a SOT-23 package and is lead-free, making it suitable for various applications, including automotive and other sectors requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.1 mA
Collector-Base Breakdown Voltage V(BR)CBO 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V
DC Current Gain hFE 80 140 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Input Voltage (off) Vi(off) - 1.2 0.8 V
Input Voltage (on) Vi(on) 3.0 1.6 - V
Input Resistor R1 R1 32.9 47 61.1
Resistor Ratio R1/R2 R1/R2 0.8 1.0 1.2 -
Total Device Dissipation (TA = 25°C) PD 246 - 400 mW
Thermal Resistance, Junction to Ambient RθJA 508 - 311 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor and its external resistor bias network into one device.
  • Reduces Board Space: Compact SOT-23 package minimizes the footprint on the PCB.
  • Reduces Component Count: Eliminates the need for external resistors, reducing the overall component count.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific control change requirements.
  • Lead-Free Packaging: Compliant with lead-free regulations, making it environmentally friendly.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Suitable for various consumer electronic devices where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control systems where reliability and compact design are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications requiring a compact and reliable transistor solution.

Q & A

  1. What is the MMUN2213LT1G?

    The MMUN2213LT1G is a digital transistor with a monolithic bias resistor network, designed to integrate a single transistor and its external resistor bias network into one device.

  2. What package type does the MMUN2213LT1G come in?

    The MMUN2213LT1G is available in a SOT-23 package.

  3. Is the MMUN2213LT1G lead-free?

    Yes, the MMUN2213LT1G is lead-free, making it compliant with environmental regulations.

  4. What are the key benefits of using the MMUN2213LT1G?

    The key benefits include simplifying circuit design, reducing board space, and decreasing the overall component count.

  5. Is the MMUN2213LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  6. What is the maximum collector-emitter breakdown voltage of the MMUN2213LT1G?

    The maximum collector-emitter breakdown voltage is 50 V.

  7. What is the typical DC current gain of the MMUN2213LT1G?

    The typical DC current gain (hFE) is 140.

  8. What is the maximum collector-emitter saturation voltage of the MMUN2213LT1G?

    The maximum collector-emitter saturation voltage is 0.25 V.

  9. What is the thermal resistance, junction to ambient, for the MMUN2213LT1G?

    The thermal resistance, junction to ambient (RθJA), is 508 °C/W.

  10. What is the junction and storage temperature range for the MMUN2213LT1G?

    The junction and storage temperature range is -55°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.15
1,600

Please send RFQ , we will respond immediately.

Same Series
DTC144EET1G
DTC144EET1G
TRANS PREBIAS NPN 50V 100MA SC75
MUN2213T1G
MUN2213T1G
TRANS PREBIAS NPN 50V 100MA SC59
MUN5213T1G
MUN5213T1G
TRANS PREBIAS NPN 50V SC70-3
SMMUN2213LT3G
SMMUN2213LT3G
TRANS PREBIAS NPN 50V SOT23-3
DTC144EM3T5G
DTC144EM3T5G
TRANS PREBIAS NPN 50V SOT723
SMUN5213T1G
SMUN5213T1G
TRANS PREBIAS NPN 50V SC70-3
SMUN2213T1G
SMUN2213T1G
TRANS PREBIAS NPN 230MW SC59
NSVDTC144EM3T5G
NSVDTC144EM3T5G
TRANS PREBIAS NPN 50V SOT723
NSBC144EF3T5G
NSBC144EF3T5G
TRANS PREBIAS NPN 50V SOT1123

Similar Products

Part Number MMUN2213LT1G MMUN2217LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2233LT1G MMUN2113LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 47 kOhms 4.7 kOhms 10 kOhms 10 kOhms 4.7 kOhms 4.7 kOhms 47 kOhms 10 kOhms 22 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms 47 kOhms - - 47 kOhms 47 kOhms 10 kOhms 22 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 400 mW 400 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

MUN2232T1G
MUN2232T1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
PDTC114EK,115
PDTC114EK,115
NXP USA Inc.
NEXPERIA PDTC114E - NPN RESISTOR
MUN2113T1G
MUN2113T1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
PDTA114YUF
PDTA114YUF
Nexperia USA Inc.
PDTA114YU/SOT323/SC-70
MMUN2211LT1G
MMUN2211LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MUN5235T1G
MUN5235T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
PDTB113ZT,215
PDTB113ZT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
PDTC123TT,235
PDTC123TT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTC114EK,135
PDTC114EK,135
NXP USA Inc.
TRANS PREBIAS NPN 250MW SMT3
MUN5211T1
MUN5211T1
onsemi
TRANS BRT NPN 50V SS MONO SOT323
PDTC124EU/ZLF
PDTC124EU/ZLF
Nexperia USA Inc.
PDTC124EU/ZLF
PDTC114ET-QR
PDTC114ET-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB